Reliability studies on NPN RF power transistors under swift heavy ion irradiation

Pushpa, N.; Praveen, K. C.; Prakash, A. P. Gnana; Naik, P. S.; Cressler, John D.; Gupta, S. K.; Revannasiddaiah, D.

doi:10.1016/j.nimb.2011.07.032

Cited by 17 publications

(5 citation statements)

References 13 publications

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“…The radiation-induced I B is the resultant of increased recombination in the E-B depletion region (18). The performance and stability of a transistor are often expressed in terms of its transconductance (g m ) which is defined as follows (19):…”

Section: I-v Measurementsmentioning

confidence: 99%

Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

Bharathi

Hegde

Anjum

et al. 2017

Radiation Effects and Defects in Solids

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The total dose effects of 1 MeV electrons on the dc electrical characteristics of silicon NPN transistors are investigated in the dose range from 100 krad to 100 Mrad. The different electrical characteristics such as Gummel characteristics, excess base current ( I B ), dc current gain (h FE ), transconductance (g m ), displacement damage factor (K) and output characteristics were studied in situ as a function of total dose. A considerable increase in base current (I B ) and a decrease in h FE , g m and I CSat was observed after 1 MeV electron irradiation. The collector-base (C-B) junction capacitance of transistors was measured to estimate the change in the effective carrier concentration. After 1 MeV electron irradiation, a considerable degradation in capacitance was observed. The plot of (1/C 2 ) versus voltage shows that the effective carrier concentration and built-in voltage (V bi ) increase marginally upon 1 MeV electron irradiation. The results of 1 MeV electron irradiation were compared with 1 MeV proton and Co-60 gamma irradiation results in the same dose range. The degradation for 1 MeV electron and Co-60 gamma-irradiated transistors was significantly less when compared to 1 MeV proton-irradiated transistor. The 1 MeV proton, 1 MeV electron and Co-60 gamma-irradiated transistors were subjected to isochronal annealing to analyze the recovery of the electrical parameters. ARTICLE HISTORY

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Section: I-v Measurementsmentioning

confidence: 99%

Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

Bharathi

Hegde

Anjum

et al. 2017

Radiation Effects and Defects in Solids

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“…These defects with larger concentration could be detected using DLTS. Defects, induced by the interaction of radiation with semiconductors, are primary point defect vacancies and interstitials [21]. Clusters of defects are generated when the incident particle, such as a swift carbon ion, transfers enough energy to the recoil atoms to allow large cascades of displacements.…”

Section: Dlts Measurementsmentioning

confidence: 99%

Carbon Ion Irradiation Damage Effects on Electrical Characteristics of Silicon PNP Power BJTs

Krishnakumar

Dinesh²,

Madhu

et al. 2015

IEEE Trans. Device Mater. Relib.

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The 85 MeV 12 C 6+ and 35 MeV 12 C 3+ ion induced forward current gain degradation on 2N 6052 transistor is investigated by I-V measurements before and after irradiation. The decrease in gain for 85 MeV C-ion irradiated transistor is drastic, indicating the device is vulnerable for higher energy irradiation. An increase in the base current leading to degradation of the current gain may be due to displacement damage dose. C-V measurements estimate the effect of irradiation on the doping concentration of the devices. A plot of (1/C 2 ) versus base-emitter voltage shows that the doping concentration increases marginally upon irradiation. DLTS measurements indicate the cluster defects are produced after irradiation to a fluence of 1 × 10 12 ions/cm 2 .

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“…In order to understand the observed deterioration in the ion irradiated transistors, it is important to analyze the effect of irradiation on the device structure and the role of the associated energy loss mechanisms [16][17][18]. It is well known that when high-energy ion passes through a solid, it loses its energy via two processes, namely, electronic excitations (electronic energy loss, S e ) and direct nuclear collisions with the target atoms (nuclear energy loss, S n ).…”

Section: Damage Mechanism and Srim Calculationsmentioning

confidence: 99%

“…Table 4 shows the irradiation time required for 60 Co gamma and O 7+ ion. The irradiation time taken with 100 MeV O 7+ ion to reach 100 Mrad of total dose is considerably less when compared to gamma irradiation facilities [12,48].…”

Section: High Energy Ion Irradiation Effects On Si Mosfetsmentioning

confidence: 99%

Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

Prakash

Pushpa²

2015

SSP

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Silicon bipolar junction transistors (BJTs), Silicon-germanium heterojunction bipolar transistors (SiGe HBTs) and metal oxide semiconductor (MOS) devices are the key components of BiCMOS integrated circuits. The semiconductor devices need to withstand very high total doses (100’s of Mrad) for reliable operation of electronic circuits for 8-10 years of LHC operation. The study of radiation tolerance of semiconductor devices up to 100 Mrad of total dose takes longer time with conventional 60Co gamma, proton and electron irradiation facilities and the effects due to these radiations are well understood. Hence it is important to study the effects of heavy ion irradiation on various semiconductor devices. The irradiation time decreases with increasing linear energy transfer (LET) of incident radiation and LET increases with atomic number of the impinging ions. But it is essential to understand the mechanism of energy transfer by different heavy ions in semiconductor devices. Therefore, here we give an overview of different heavy ion interactions with Si BJTs, MOSFETs and SiGe HBTs by primarily focusing on the electrical characteristics of these devices before and after ion irradiation. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

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Reliability studies on NPN RF power transistors under swift heavy ion irradiation

Cited by 17 publications

References 13 publications

Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

Carbon Ion Irradiation Damage Effects on Electrical Characteristics of Silicon PNP Power BJTs

Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

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