In Situ Investigation of Current Transport Across Pt/n-Si (100) Schottky Junction During 100 $\hbox{MeV Ni}^{+7}$ Ion Irradiation

Verma, Shailendra Kumar; Praveen, K. C.; Kumar, Tanuj; Kanjilal, D.

doi:10.1109/tdmr.2012.2217396

Cited by 23 publications

(11 citation statements)

References 17 publications

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“…After a threshold total dose the generation and recombination rates of these e-h pairs reaches equilibrium and hence the partial recovery in the electrical characteristics is observed. Similar results have been observed after swift heavy ion irradiation [5]. The threshold fluence in case of 100 MeV Ni ions irradiation on Pt/n-Si interface occurred near 4 × 10 12 ions cm −2 [5].…”

Section: Discussionsupporting

confidence: 82%

“…Similar results have been observed after swift heavy ion irradiation [5]. The threshold fluence in case of 100 MeV Ni ions irradiation on Pt/n-Si interface occurred near 4 × 10 12 ions cm −2 [5]. The recovery in gamma irradiated SB interface also starts around 340 Mrad (Si) which is equivalent to ∼ 2 × 10 12 ions cm −2 fluence of 100 MeV Ni ion beam.…”

Section: Discussionsupporting

confidence: 81%

“…There are a large number of research papers available on the ion implantation and irradiation studies on Schottky interfaces [3], [4]. Previous investigations [5] of our group have reported that 100 MeV Ni ion irradiation exhibits annealing effects on electrical properties of Pt/n-Si SB diodes. This annealing was attributed to overlapping of the damaged regions caused by high electronic energy loss of the incident ions.…”

Section: Introductionmentioning

confidence: 99%

“…This study is a systematic correlation of electronic energy loss due to swift heavy ion irradiation and gamma irradiation. The dose intervals considered in the present investigation are equivalent to those of 100 MeV Ni ion fluences reported in our previous paper [5] to study the separate effect of S e on defect evolution in the material. The effect of gamma irradiation on SB diode is studied by extracting the electrical parameters such as ideality factor (η), Schottky barrier height (Φ B ), leakage current and series resistance (R s ) from the currentvoltage (I-V ) and capacitance-voltage (C-V ) characteristics before and after gamma irradiation.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under <inline-formula> <tex-math notation="TeX">${}^{60}\hbox{Co}$</tex-math></inline-formula> Gamma Irradiation

Verma

Praveen

Bobby

et al. 2014

IEEE Trans. Device Mater. Relib.

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The electrical transport characteristics of a Au/n-Si metal-semiconductor Schottky barrier junction under exposure to 60 Co gamma rays have been reported in this paper. The role of energy loss mechanisms in the Schottky junction due to gamma irradiation is studied using the current-voltage (I−V ) and capacitance-voltage (C−V ) measurements. The electrical characteristics were measured at various doses of gamma by incrementally increasing the exposure from 0.85 Mrad (Si) to 340 Mrad (Si) to systematically study the dose effects on electrical transport across the Schottky interface. After irradiation, the ideality factor was found to decrease initially up to a dose of 17 Mrad (Si), and thereafter, it started increasing. At a dose of 340 Mrad (Si), the characteristics of the Schottky interface were found to recover toward the pristine characteristics. The recovery effect is attributed to annealing of interface defects due to the electronic energy loss S e of gamma ray photons.Index Terms-Defect annealing, gamma irradiation, I-V and C-V characteristics, Schottky barrier interface.

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Section: Discussionsupporting

confidence: 82%

Section: Discussionsupporting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under <inline-formula> <tex-math notation="TeX">${}^{60}\hbox{Co}$</tex-math></inline-formula> Gamma Irradiation

Verma

Praveen

Bobby

et al. 2014

IEEE Trans. Device Mater. Relib.

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“…This type of effect has been observed in Schottky diodes exposed to swift heavy ions. [41][42][43][44] The higher charge state beams produced in the EBIT have lower beam currents; therefore, devices irradiated at higher charge states require a longer irradiation time to reach a given fluence compared to devices irradiated with lower charge states. So, it is possible that the longer irradiation time for the highest fluence point for the Ar 11+ data set shows a reduced effect due to an increased amount of room-temperature annealing.…”

Section: B Data Analysismentioning

confidence: 99%

Effects of slow highly charged ion irradiation on metal oxide semiconductor capacitors

Cutshall

Kulkarni

Harriss

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Measurements were performed to characterize and better understand the effects of slow highly charged ion (HCI) irradiation, a relatively unexplored form of radiation, on metal oxide semiconductor (MOS) devices. Si samples with 50 nm SiO 2 layers were irradiated with ion beams of Ar Q+ (Q = 4, 8, and 11) at normal incidence. The effects of the irradiation were encapsulated with an array of Al contacts forming the MOS structure. High frequency capacitance-voltage (CV) measurements reveal that the HCI irradiation results in stretchout and shifting of the CV curve. These changes in the CV curve are attributed to dangling Si bond defects at the Si/SiO 2 interface and trapped positive charge in the oxide, respectively. Charge state dependencies have been observed for these effects with the CV curve stretchout having a dependence of Q ∼1.7 and the CV curve shifting with a dependence of Q ∼1.8 . These dependencies are similar to the results of previous studies focused on the Q-dependence of the stopping power of HCIs. Published by the AVS.

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In situ IV and CV characterization of Pt/n-GaN Schottky barrier diodes irradiated by 100 MeV oxygen ions

Kumar,

Chand,

Pandey

et al. 2023

J Mater Sci: Mater Electron

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In Situ Investigation of Current Transport Across Pt/n-Si (100) Schottky Junction During 100 $\hbox{MeV Ni}^{+7}$ Ion Irradiation

Cited by 23 publications

References 17 publications

Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under <inline-formula> <tex-math notation="TeX">${}^{60}\hbox{Co}$</tex-math></inline-formula> Gamma Irradiation

Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under <inline-formula> <tex-math notation="TeX">${}^{60}\hbox{Co}$</tex-math></inline-formula> Gamma Irradiation

Effects of slow highly charged ion irradiation on metal oxide semiconductor capacitors

In situ IV and CV characterization of Pt/n-GaN Schottky barrier diodes irradiated by 100 MeV oxygen ions

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