Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under <inline-formula> <tex-math notation="TeX">${}^{60}\hbox{Co}$</tex-math></inline-formula> Gamma Irradiation

Abstract

The electrical transport characteristics of a Au/n-Si metal-semiconductor Schottky barrier junction under exposure to 60 Co gamma rays have been reported in this paper. The role of energy loss mechanisms in the Schottky junction due to gamma irradiation is studied using the current-voltage (I−V ) and capacitance-voltage (C−V ) measurements. The electrical characteristics were measured at various doses of gamma by incrementally increasing the exposure from 0.85 Mrad (Si) to 340 Mrad (Si) to systematically study the dose effects on electrical transport across the Schottky interface. After irradiation, the ideality factor was found to decrease initially up to a dose of 17 Mrad (Si), and thereafter, it started increasing. At a dose of 340 Mrad (Si), the characteristics of the Schottky interface were found to recover toward the pristine characteristics. The recovery effect is attributed to annealing of interface defects due to the electronic energy loss S e of gamma ray photons.Index Terms-Defect annealing, gamma irradiation, I-V and C-V characteristics, Schottky barrier interface.

Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

“…The proton irradiation experiments were conducted at the Institute of Technology and Peking University. The proton's energy and flux were 2 MeV and 1×10 13 p/cm 2 , respectively.…”

“…The researchers discovered that the ideality factor initially increased and decreased at extremely high doses. [13] Proton damage on the steady-state and dynamic responses of PECVD-passivated GaN high electron mobility transistors (HEMTs) before and after 5-MeV proton irradiation was ex-plained by a decrease in two-dimensional electron gas (2DEG) mobility and sheet carrier density. [14] It is essential to characterize the irradiation damages of a power device and the damages of each component of the device to obtain a comprehensive understanding of irradiation damages.…”

Enhancement of Electrical Parameters of Ni/n-GaN SBDs under Remote and not In-flux Gamma Irradiation

“…24,25 Some studies have been conducted on GaN devices' reliability and radiation hardness, particularly for high gamma-irradiation doses. 19,[26][27][28] The present study reports the dose-dependent modifications in Ni/n-GaN SBDs electrical properties that were irradiated by remote and non-in-flux gamma rays 18,29 at cumulative doses of between 250 Gy to 1 kGy. Experimental 4 μm thick epitaxial, Si-doped GaN layer grown on polished sapphire (0001) was used to fabricate Ni/n-GaN SBDs.…”

“…Although the loss of nuclear energy induces point defects on the interface, electronic energy loss produces complex defect zones and allows the defects to anneal. 11,17,18 Gamma radiation causes damage to ionization in semiconductor materials and affects the electrical transport properties of these devices. [19][20][21] Gamma radiation has no nuclear energy loss component and the displacement damage caused by gamma-generated secondary electrons.…”

“…The electrical transport measurements were carried out remote and not influx since the devices are tested within 15 min after taking them from the irradiation chamber and are tested at a place far away from the gamma source as specified in MIL-STD 750 E methods. 18,29 Results Figure 1 displays the pristine and gamma-irradiated I-V plots for various dose ranges from 250 Gy to 1 kGy at room temperature.…”