Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO2/Si nMOSCAPs

Manikanthababu, N.; Basu, Tanmoy; Vajandar, Saumitra; Rao, S. Venugopal; Panigrahi, B. K.; Osipowicz, T.; Pathak, A. P.

doi:10.1007/s10854-020-02879-w

Cited by 16 publications

(15 citation statements)

References 62 publications

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“…Otherwise, many applications of power MOSFETs need to be radiationhardened [12]. In addition, the influence of ionizing radiation on some MOSFETs con-taining different materials [13][14][15][16][17][18][19] and on some commercial electronic devices [20][21][22] has been investigated.…”

Section: Introductionmentioning

confidence: 99%

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

et al. 2022

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The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.

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Section: Introductionmentioning

confidence: 99%

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

et al. 2022

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“…For devices fabricated by vacuum methods, radiation-induced charge trapping/detrapping behaviors among dielectrics of transistors dominate the device degradation . Generally, oxygen vacancies could lead to increased electron concentration under radiation exposure and are responsible for the radiation-induced degradation in high- k oxides . Investigation on Al 2 O 3 deposited by ALD has shown that the gamma irradiation on thin films caused significant oxygen vacancy formation and barrier height reduction .…”

Section: Introductionmentioning

confidence: 99%

“…Investigation on Al 2 O 3 deposited by ALD has shown that the gamma irradiation on thin films caused significant oxygen vacancy formation and barrier height reduction . Nevertheless, to the best of our knowledge, the radiation-induced degradation of solution-processed high- k dielectrics has been seldom investigated and reported . This study aims to explore the applications of radiation-hardened solution-processed ZrLaO dielectrics in TFTs and inverters working in harsh radiation environments.…”

Section: Introductionmentioning

confidence: 99%

“…23 Generally, oxygen vacancies could lead to increased electron concentration under radiation exposure and are responsible for the radiation-induced degradation in high-k oxides. 24 Investigation on Al 2 O 3 deposited by ALD has shown that the gamma irradiation on thin films caused significant oxygen vacancy formation and barrier height reduction. 25 Nevertheless, to the best of our knowledge, the radiation-induced degradation of solution-processed high-k dielectrics has been seldom investigated and reported.…”

Section: ■ Introductionmentioning

confidence: 99%

“…25 Nevertheless, to the best of our knowledge, the radiation-induced degradation of solution-processed high-k dielectrics has been seldom investigated and reported. 24 This study aims to explore the applications of radiation-hardened solution-processed ZrLaO dielectrics in TFTs and inverters working in harsh radiation environments. Solution-processed ZrLaO thin films and InO x /ZrLaO TFTs with different La corporations were fabricated.…”

Section: ■ Introductionmentioning

confidence: 99%

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High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

Fang

Zhao

Mitrović

et al. 2021

ACS Appl. Mater. Interfaces

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Radiation hardness is important for electronics operating in harsh radiation environments such as outer space and nuclear energy industries. In this work, radiation-hardened solution-processed ZrLaO thin films are demonstrated. The radiation effects on solution-processed ZrLaO thin films and InO x /ZrLaO thin-film transistors (TFTs) were systemically investigated. The Zr0.9La0.1O y thin films demonstrated excellent radiation hardness with negligible roughness, composition, electrical property, and bias-stress stability degradation after radiation exposure. The metal-oxide-semiconductor capacitors (MOSCAPs) based on Zr0.9La0.1O y gate dielectrics exhibited an ultralow flat band-voltage (V FB) sensitivity of 0.11 mV/krad and 0.19 mV/krad under low dose and high dose gamma irradiation conditions, respectively. The low dose condition had a 103 krad (SiO2) total dose and a 0.12 rad/s low dose rate, whereas the high dose condition had a 580 krad total dose and a 278 rad/s high dose rate. Furthermore, InO x /Zr0.9La0.1O y thin-film transistors (TFTs) exhibited a large I on/I off of 2 × 106, a small subthreshold swing (SS) of 0.11 V/dec, a small interface trap density (D it) of 1 × 1012 cm–2, and a 0.16 V threshold shift (ΔV TH) under 3600 s positive bias-stress (PBS). InO x /Zr0.9La0.1O y TFT-based resistor-loaded inverters demonstrated complete swing behavior, a static output gain of 13.3 under 4 V V DD, and an ∼9% radiation-induced degradation. Through separate investigation of the radiation-induced degradation on the semiconductor layer and dielectric layer of TFTs, it was found that radiation exposure mainly generated oxygen vacancies (Vo) and increased electron concentration among gate oxide. Nevertheless, the radiation-induced TFT instability was mainly related to the semiconductor layer degradation, which could be possibly suppressed by back-channel passivation. The demonstrated results indicate that solution-processed ZrLaO is a high-potential candidate for large-area electronics and circuits applied in harsh radiation environments. In addition, the detailed investigation of radiation-induced degradation on solution-processed high-k dielectrics in this work provided clear inspiration for developing novel flexible rad-hard dielectrics.

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