Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

Abstract

The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.

Experimental method for determining the supply current of a PMOS power transistor for use as a RADFET dosimeter

“…Using that process, Commercial off-the-shelf (COTS) transistors can be an alternative to low-cost dosimetry in laboratory test procedures of irradiation with X-rays and gamma-rays [6,7].…”