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We report on the influence of resistivity in picosecond (ps) laser ablation of Silicon (Si) leading to the formation of diverse surface micro- and nanostructures. Subsequently, we investigated their potential in sensing applications based on the surface enhanced Raman scattering (SERS) technique. The varying resistivity (ρ1: 1-10 Ωcm, ρ2: 0.01-0.02 Ωcm, ρ3: 0.001-0.005 Ωcm) Si wafers were subjected to cross patterned ps laser ablation in ambient air. Ladder-like microstructures embedded with numerous nano growths were formed on low resistivity Si (ρ3) while similar micro- and nanostructures were observed on higher resistivity Si (ρ2 <ρ1). The structures were non-plasmonic and anti-reflecting in nature with an optical reflectance of <6 % over a broad range of wavelengths (350-1200 nm). Non-plasmonic Si microstructures were subsequently transformed to plasmonic by means of deposition of a thin layer of gold (Au). Additionally, the effect of annealing on the evolution of nanostructures was also investigated. We employed these hybrid substrates for the trace detection of an explosive molecule, ammonium nitrate (AN), and dye, malachite green (MG). Our detailed SERS studies have demonstrated a superior enhancement in the trace detection of analytes for low resistivity Si substrate. However, the annealed hybrid substrates have demonstrated further improvement in the SERS signal (by at least one order of magnitude). These detailed SERS investigations provide us a proof of the sensitivity of different resistivity Si nano/microstructures.

We report on the ultrafast (femtosecond) laser ablation of monocrystalline Si (100), polycrystalline Si, and Si (100) capped with a SiO2 layer. The target material was ablated using femtosecond laser pulses (~50 fs duration, 1 kHz repetition rate, and 800 nm wavelength) with an input energy of ~100 μJ in acetone medium to fabricate Si Nanoparticles (NPs). The average size of NPs produced by Si (100) was found to be less than that of the particles produced by poly Si. Ablation of Si caped with SiO2 resulted in bigger Si NPs together with a low concentration of SiO2 NPs. NPs were found to be of polycrystalline in all three cases irrespective of the initial phase.

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This work explored the fundamental differences/mechanisms between the GaAs substrates ablated in two different media of air and distilled water (DW). A scan area of 5 × 5 mm2 was ablated by a picosecond laser with a pulse duration of 30 ps, a repetition rate of 10 Hz, a wavelength of 1064 nm, and a pulse energy of 2 mJ. The spacing between raster scan lines was varied (0.05–0.35 mm), keeping the scan speed (0.15 mm/s) constant. The obtained GaAs nanostructures (NSs) were thoroughly analyzed using microscopy techniques. A clear increase in separation between the raster scan lines was observed with an increase in the scan spacing for the GaAs NSs fabricated in air, whereas the same result was not observed in DW. Moreover, structures with debris were formed in air irrespective of the spacing, unlike the formation of uniform quasiperiodic GaAs NSs throughout the sample in the case of DW ablation. To the best of our knowledge, there are no reports on the detailed studies involving DW in the fabrication of quasiperiodic NSs of GaAs. Further, these quasiperiodic GaAs NSs formed in DW were coated with a thin layer of gold using the thermal evaporation method, annealed at 400 °C for 1 h in an ambient atmosphere. As a consequence of annealing, Au NPs were uniformly decorated on the quasiperiodic NSs of GaAs imparting plasmonic nature to the whole structures. Subsequently, the Au NPs decorated GaAs NSs were utilized as surface enhanced Raman scattering substrates for the detection of methylene blue (dye molecule) and Thiram (pesticide molecule) at low concentrations.

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