An analysis of 100MeV F8+ ion and 50MeV Li3+ ion irradiation effects on silicon NPN rf power transistors

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

“…5 at fixed V BE of 0.6 V after four kinds of heavy ion irradiation, where β pre and β post are the current gain before and after irradiation, respectively. It is indicated that all four ion curves show a nonlinear (linear) behavior at low (large) fluence, following the Messenger-Spratt equation [14,22] ∆ 1…”

“…As reported in Refs. [14]- [16], the swift heavy ions can produce ionization damages and displacement damages in the transistors, simultaneously. Ionization damages create some positive oxide trapped charges and interface states around the EB spacer oxide layer, which act as generation-recombination (G-R) centers and increase the base surface recombination current in the low V BE region.…”

“…Ionization damages create some positive oxide trapped charges and interface states around the EB spacer oxide layer, which act as generation-recombination (G-R) centers and increase the base surface recombination current in the low V BE region. [12][13][14][15] Displacement damages are induced by the collision between incoming particles and atoms in the semiconductor lattice. When the swift heavy ion passes through the semiconductor material, the lattice atoms will deviate from their original position.…”

“…An obvious sub-linear behavior is found after 60 Co gamma ray irradiation, and ∆(1/β ) tends to saturate at the high dose region. This is a typical result contributed by interface states and oxide trapped charges, [3,7,14] which implies that the degradation in the current gain is dominated by ionization damages. However, for the 10-MeV Cl ion irradiation, ∆(1/β ) increases non-linearly when the absorbed dose is lower than 6 kGy (Si), and it increases linearly when the absorbed dose is larger than 10 kGy (Si).…”

“…Displacement damages can create different intermediate trap levels in bulk materials, which reduces the minority carrier lifetime and thereby degrades the base current. [14] The neutron is a typical radiation source to quantify displacement damages in the last few years. However, neutron reactors are less and less available now, and large residual radiation exists in the samples exposed to neutron irradiation.…”