The basic parameters for the transport and epitaxial growth of normalGaAs in an open flow system have been studied using hydrogen chloride as the transport agent. Selenium‐ and tin‐doped normalGaAs layers were grown in this system, the maximum doping levels achieved being 3.7×1.018 electrons cm−3 and 3.2×1018 electrons cm−3 , respectively. Pure layers of normalGaAs have been grown by means of the AsCl3/normalGa/H2 reaction. The best layer had a room temperature carrier concentration of 1.75×1015 electrons cm−3 and a mobility of 8800 cm2/v‐sec. At 77°K the mobility value was 38,000 cm2/v‐sec.

Small crystals of InAs, InP, GaAs, and GaP have been grown from a vapor composed of the monochloride or mono-iodide of the metal and phosphorus or arsenic. Crystal growth took place at from 100 ~ to 300~ below the melting points of the compounds. Whiskers of InAs up to 2 cm long also have been grown.

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The purest indium arsenide so far reported has a carrier concentration of about 1.3.1016 electrons/cm3 at room temperature. This is several times the intrinsic value and it has been suggested that the limiting impurity may be sulfur originating in the arsenic component. Arsenic has been prepared by the thermal decomposition of highly purified arsine gas and has been combined with samples of indium purified by a variety of processes. Mass spectrographic analysis of the resultant ingots showed in all cases a sulfur content less than 0.05 ppm. The purest sample had a Hall coefficient of 795 cm3/coulomb at 77°K, corresponding to an electron concentration of 8.1015/cm3 while the Hall mobility was 75,700 cm2/v/sec. Analytical techniques failed to detect the prime source of the free electron concentration, but it is concluded that sulfur is not the dominant impurity in these samples.