Small crystals of InAs, InP, GaAs, and GaP have been grown from a vapor composed of the monochloride or mono-iodide of the metal and phosphorus or arsenic. Crystal growth took place at from 100 ~ to 300~ below the melting points of the compounds. Whiskers of InAs up to 2 cm long also have been grown.

The passivation of zinc acceptors in InP has been observed, originally in zinc-doped InGaAs/InP heterostructures. Evidence is presented to show that hydrogen, which has been detected by secondary ion mass spectrometry, is responsible for the phenomenon and that the source of atomic hydrogen is the arsine used in the epitaxial process. The hydrogen is bound within the epitaxial layers during the cooling down stage after growth is complete.

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The dielectric constant of gallium arsenide has been measured over the frequency range around 9.5 GHz where a resonance has been reported. No evidence of an appreciable variation in dielectric constant was observed. An accurate measurement at 9.4 GHz gave a dielectric constant of 12.35 and a loss tangent of 5.6 × 10−4.