Preparation of Crystals of InAs, InP, GaAs, and GaP by a Vapor Phase Reaction

Antell, G. R.; Effer, D.

doi:10.1149/1.2427398

Cited by 61 publications

(27 citation statements)

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“…The following reactions, in which X denotes C1 or I, are sufficient to describe the equilibria between the species involved in the transport of gallium arsenide by iodine or chlorine in the presence of hydrogen, between 800 ~ and 1300~ GaX~(g) ~ GaX(g) + X2(g) [1] 1 2GaX(g) +~-As4(g)e~--2GaAs(s) -~ X2(g) [2] X2(g) ~ 2X(g) [3] H2(g) § X2(g) ~ 2HX(g) [4] If no hydrogen is present, reaction [4] is not involved, and because the pressure of free halogen is small, reaction [3] may be omitted and reactions [1] and [2] replaced by the single reaction…”

Section: Chemical Equilibria Involved In the Transport Of Gallium Ars...mentioning

confidence: 99%

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The Transport of Gallium Arsenide in the Vapor Phase by Chemical Reaction

Fergusson¹,

Gabor

1964

J. Electrochem. Soc.

109

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The heat contents and entropies have been derived as a function of temperature for gallium arsenide and the gaseous species which exist in equilibrium with it, in the temperature range 800~176 when iodine or hydrogen chloride and hydrogen are also present. The important gaseous species are shown to be GaC13, GaIs, GaC1, GaI, HI, I2, I, HC1, As4, and H2. Under certain conditions the species As2, AsC13, and Ga (liq.) may also be present. The free energy changes for reactions among the above species are derived. They are shown to be consistent with those isothermal equilibria that have been directly measured. The free energy changes are used, together with the conservation equations for nondepositing components (I, C1, H, and As in excess of the stoichiometric Ga: As: 1:1 ratio) to give the partial pressures of all the important species at any temperature in a temperature gradient in a constant pressure system. The results are applicable to the calculation of the flux of gallium arsenide in open flow or closed tube (diffusive transport) systems, and they are in good agreement with experimentally measured rates of transport in the system GaAs-H2-C12 in an open flow apparatus.

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Section: Chemical Equilibria Involved In the Transport Of Gallium Ars...mentioning

confidence: 99%

“…The standard free energy changes as a function of temperature for reactions [1][2][3][4] are obtained directly from the values of Table I and are listed in Table II. They are compared with the available experimental data in Table III.…”

Section: S~mentioning

confidence: 99%

The Transport of Gallium Arsenide in the Vapor Phase by Chemical Reaction

Fergusson¹,

Gabor

1964

J. Electrochem. Soc.

109

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“…The growth of crystals of various III-V compounds has been reported [GaP (177), GaAs (177,178), InP (177,179), InAs (177,180), InAs-GaAs solid solutions (181), and InSb (182)]. Small crystals of GaP, GaAs, InP, and InAs were made by vapor-phase gas reactions as reported by Antell & Effer (177).…”

Section: Solid State Reactionsmentioning

confidence: 87%

The Solid State

Hannay¹,

Kaiser²,

Thurmond³

1960

Annu. Rev. Phys. Chem.

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“…The first utilization of an OT-CVT procedure dates back to 1959, when Antell and Effer were able to grow InP and InAs using InI 3 as a transport agent [24].…”

Section: Tðlþ Tð0þmentioning

confidence: 99%