An investigation into the apparent purity limit in GaSb

Effer, D.; Etter, P.J.

doi:10.1016/0022-3697(64)90117-9

Cited by 115 publications

(21 citation statements)

References 12 publications

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“…The hole concentration is about 2 ϫ10 17 cm Ϫ3 at all different annealing temperatures, which is consistent with the observation of stable hole concentration upon annealing reported by Effer and Etter. 12 In the work of Van Der Meulen, 7 it was pointed out the residual acceptor was related to the Ga excess and contained a vacancy in its structure. It was further argued that because of its lack of mobility and stability upon annealing, the residual acceptor must be a V Ga Ga Sb .…”

mentioning

confidence: 99%

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Ling¹,

Mui²,

Lam³

et al. 2002

Applied Physics Letters

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Positron lifetime, Photoluminescence and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314ps lifetime component, attributed to VGa related defect, was identified in the positron lifetime measurement. In the PL measurement, a 778meV and a 797meV peaks were observed. Isochronal annealing studies were performed and at the temperature of 300 o C, both the 314ps positron lifetime component and the two PL signals disappeared, which gives a clear and strong evidence for their correlation. However, the hole concentration (∼ 2 × 10 17 cm −3 ) was observed to be constant throughout the whole annealing temperature range up to 500 o C. Contradictory to general belief, this implies, at least for samples with annealing temperatures above 300 o C, the Ga vacancy is not the acceptor responsible for the p-type conduction.

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mentioning

confidence: 99%

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Ling¹,

Mui²,

Lam³

et al. 2002

Applied Physics Letters

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“…Although the samples were not intentionally doped, each contained N IOl7 acceptors/cm3. These acceptors have previously been attributed to nonstoichiometric defects, which are probably G a atoms at Sb sites (Fuller and Wolfstirm 1963;Effer and Etter 1964;Van der Meulen 1967;Allegre et al 1970). The acceptor concentration in each sample was obtained froin measurements of the resistivity and Hall constant as a function of temperature between 77 OK and 300 O K (Hill 1972).…”

Section: Description Of the Experiments And Resultsmentioning

confidence: 95%

“…The acceptor concentration in each sample was obtained froin measurements of the resistivity and Hall constant as a function of temperature between 77 OK and 300 O K (Hill 1972). The transport measurements were analyzed using Effer and Etter's (1964) model in which the acceptors are described by a single activation energy (E, , 2: 0.030 eV) and the concentration of compensating donors is assumed small compared with that of the acceptors. The samples were mechanically polished and then etched for about 5 s in CP4:5HN0,:3CH4-COOH:3HF.…”

Section: Description Of the Experiments And Resultsmentioning

confidence: 99%

Optical Pumping of Spin-Polarized Conduction Electrons and Inelastic Scattering by Neutral Acceptors

Parsons¹

1973

Can. J. Phys.

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The energy relaxation mechanisms of conduction electrons in p-type GaSb at 1.9 OK are investigated by an optical pumping technique. Spin-polarized electrons are excited across the forbidden band gap with circularly polarized light. The number of photocreated electrons is obtained from the intensity of the photoluminescence; and the spin polarization from thedegreeof polarization of the photoluminescence. The experiment shows that the number of electrons and the spin polarization at the conduction band edge depend on the initial energy of the electrons and on the number of neutral acceptors. An explanation of the results is given in terms of two processes of energy relaxation for conduction electrons: (i) the emission of longitudinal optical phonons, and (ii) inelastic scattering by neutral acceptors.Les mecanismes de relaxation d'energie des Clectrons de conduction dans GaSb de type p a 1.9 "K son1 CtudiCs par une technique de pompage optique. Des electrons a spins polarises sont excites a travers la bande interdite par desorption de lurniere polarisee circulairement. Le nombre d'Clectrons photo-crets est obtenus de I'intensitt de la photoluminescence; et la polarisation des spins, du degrC de polarisation de la photoluminescence. L'experience rnontre que le nombre d'klectrons et la polarisation des spins au seuil de la bande de conduction dependent de l'energie initiale des electrons et du nombre des accepteurs neutres. Une explication des rksultats est donnee en termes de deux processus de relaxarion d'energie pour des electrons de conduction: (i) I'Cmission de phonons optiques longitudinaux, et (ii) une diffusion inelastique par les accepteurs neutres.[Traduit par le journal]Can. J. Phys., 51, 718 (1973)

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“…4) due to native defects [20,21]. These p−type native defects include Ga antisite defect (Ga Sb ) [22], Ga vacancy (V Ga ) [23], and complex defect composed of a V Ga and a Ga Sb [24]. Ga antisite is believed to be the main defect with concentration increasing with Ga−rich growth condi− tions.…”

Section: Resultsmentioning

confidence: 99%

Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

Benyahia

Kubiszyn

Michalczewski

et al. 2016

Opto-Electronics Review

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Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

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An investigation into the apparent purity limit in GaSb

Cited by 115 publications

References 12 publications

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Optical Pumping of Spin-Polarized Conduction Electrons and Inelastic Scattering by Neutral Acceptors

Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

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