The basic parameters for the transport and epitaxial growth of normalGaAs in an open flow system have been studied using hydrogen chloride as the transport agent. Selenium‐ and tin‐doped normalGaAs layers were grown in this system, the maximum doping levels achieved being 3.7×1.018 electrons cm−3 and 3.2×1018 electrons cm−3 , respectively. Pure layers of normalGaAs have been grown by means of the AsCl3/normalGa/H2 reaction. The best layer had a room temperature carrier concentration of 1.75×1015 electrons cm−3 and a mobility of 8800 cm2/v‐sec. At 77°K the mobility value was 38,000 cm2/v‐sec.

Small crystals of InAs, InP, GaAs, and GaP have been grown from a vapor composed of the monochloride or mono-iodide of the metal and phosphorus or arsenic. Crystal growth took place at from 100 ~ to 300~ below the melting points of the compounds. Whiskers of InAs up to 2 cm long also have been grown.

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