The preparation of high purity gallium arsenide by vapour phase epitaxial growth

Knight, J.R.; Effer, D.; Evans, Paul

doi:10.1016/0038-1101(65)90050-x

Cited by 151 publications

(22 citation statements)

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“…However, the present study, as well as other recent works (9,12,14), suggests that the growth rate is related to the partial pressure of the individual reactants, GaC1 and AsH3 or As4, rather than to the Ga/As gas ratio. Since increasing AsH8 flow rates increase the growth rate, in accord with thermodynamic expectations, and increasing HCI flow rates decrease the growth rate, contrary to equilibrium thermodynamics (17), it appears that GaC1 is the chemical species limiting the growth rate. This could arise at high HC1 flow rates by nearly complete filling of adsorption sites with GaC1 on the crystal surface, to the exclusion of the As-species.…”

Section: Gacl(g) 4-1/2 As~(g) + 1/2 H2(g) ----Gaas(s) 4-hcl(~)supporting

confidence: 52%

Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions

Enstrom

Nuese

Appert

et al. 1974

J. Electrochem. Soc.

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The vapor-hydride method of GaAs epitaxial growth permits separate control of the flow rates of both the AsH~ and HC1 reactant species. In the present work, these variables have been independently adjusted to provide gas-phase compositions ranging from Ga-rich to As-rich. The surface defect morphology has been found to be a strong function of the HC1 flow rate, changing from pits at low flow rates to hillocks at higher flow rates. In contrast, the AsH3 flow rate for constant HC1 flows principally affects the size of the defects. The growth rate increases slightly with increasing AsHs flow rate, but decreases with increasing HC1 flow rate over the range normally used. The Se-donor and Zn-acceptor concentrations both decrease with increasing HC1 flow rate, suggesting that crystal stoichiometry is not strongly influenced by the HC1 flow rate.Electroluminescent diode efficiencies range between 0.1 and 0.5% at room temperature and between 1 and 2.6% at 80~Peak efficiency values have been attained with slightly As-rich gas-phase conditions. * Electrochemical Society Active Member.

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Section: Gacl(g) 4-1/2 As~(g) + 1/2 H2(g) ----Gaas(s) 4-hcl(~)supporting

confidence: 52%

Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions

Enstrom

Nuese

Appert

et al. 1974

J. Electrochem. Soc.

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“…Growth procedures.--The VPE layers of GaAs were grown using the AsC13IGa (saturated with GaAs)IH2 synthesis system (6). Details of the handling and cleaning procedures have been previously given (1).…”

Section: Methodsmentioning

confidence: 99%

Analysis of Impurity Distribution in Homoepitaxial n on n+ Films of GaAs. II

DiLorenzo¹

1971

J. Electrochem. Soc.

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The nature and cause of a high-resistivity region (i layer) at the interface of n-type GaAs on bulk n + GaAs have received the attention of many workers in the field. Our previous investigations of impurity distributions of n + GaAs films on n + bulk GaAs substrates by Direct Image Mass Analysis (DIMA) have correlated a high concentration of silicon with a highresistivity region at the interface. Further analysis of the impurity distribution in epitaxial layers grown on bulk substrates and epitaxial layers grown on buffer layers (epitaxial layers doped to the mid-101~ cm -3 range) by vapor phase epitaxy and liquid phase epitaxy have been performed. The main conclusions of the present analysis are: (A) The buffer layer is effective in isolating the lightly doped n layer from segregated impurities at the buffer-substrate interface. (B) Group I and Group II elements have a great affinity for GaAs surfaces. (C) Preliminary observations on impurity "clusters" indicate that complicated impurity interactions may be present in GaAs. (D) The occurrence of a high concentration of silicon at the interface of epitaxial GaAs is definitely established.

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“…SiC14(g) + H2(g) = SiHC13(g) + HC1(g) (1) SiHC13(g) + H2(g) = SiH2C12(g) + HC1(g) (2) SiHC13(g) + 2H2(g) = SiH3C1(g) + 2HC1(g) (3) The doping reactions can be represented as the sum of the Si vapor species being reduced to form Si dissolved in the GaAs, or be expressed in terms of the dominant Si vapor species, which we have taken as being SiHC13.…”

Section: Theorymentioning

confidence: 99%

<title>Material Characterization And Device Performance Of Liquid Doping Si In GaAs By AsCl<formula><inf><roman>3</roman></inf></formula> Technique</title>

Feng¹,

Eu²,

Zielinski³

et al. 1982

Semiconductor Growth Technology

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This paper describes a method for the reproducible Si-doping of GaAs epitaxial material in the range of 1x1016 to 2x1019 cm -3, using a SiCly + AsCl liquid source in a GaAs + Ga /H2 /AsC13 chemical vapor deposition process.Excellent electron mobilities have been achieved for a variety of Si doped GaAs samples. Power FET devices made from this material have demonstrated output power densities of 0.86 watts /mm at 10 GHz. Low noise FET devices made from this material have demonstrated a noise figure of 2.2 dB with 8.5 dB associated gain at 12 GHz.

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The preparation of high purity gallium arsenide by vapour phase epitaxial growth

Cited by 151 publications

References 1 publication

Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions

Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions

Analysis of Impurity Distribution in Homoepitaxial n on n+ Films of GaAs. II

<title>Material Characterization And Device Performance Of Liquid Doping Si In GaAs By AsCl<formula><inf><roman>3</roman></inf></formula> Technique</title>

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