Epitaxial Growth of Doped and Pure GaAs in an Open Flow System

Abstract

The basic parameters for the transport and epitaxial growth of normalGaAs in an open flow system have been studied using hydrogen chloride as the transport agent. Selenium‐ and tin‐doped normalGaAs layers were grown in this system, the maximum doping levels achieved being 3.7×1.018 electrons cm−3 and 3.2×1018 electrons cm−3 , respectively. Pure layers of normalGaAs have been grown by means of the AsCl3/normalGa/H2 reaction. The best layer had a room temperature carrier concentration of 1.75×1015 electrons cm−3 and a mobility of 8800 cm2/v‐sec. At 77°K the mobility value was 38,000 cm2/v‐sec.

<title>Material Characterization And Device Performance Of Liquid Doping Si In GaAs By AsCl<formula><inf><roman>3</roman></inf></formula> Technique</title>

“…SiC14(g) + H2(g) = SiHC13(g) + HC1(g) (1) SiHC13(g) + H2(g) = SiH2C12(g) + HC1(g) (2) SiHC13(g) + 2H2(g) = SiH3C1(g) + 2HC1(g) (3) The doping reactions can be represented as the sum of the Si vapor species being reduced to form Si dissolved in the GaAs, or be expressed in terms of the dominant Si vapor species, which we have taken as being SiHC13.…”

MR-AQCC study on the ground and low-lying excited states of GaI

“…They have been playing important roles in the development of new semiconductor devices in high frequency and in opto-electronic applications. In chemical vapor deposition techniques such as the Effer process [1], gallium monohalides act as gas phase transporters of semiconductor materials [2][3][4]. There are many experimental and theoretical studies on the ground and low-lying electronic states of gallium monohalides, which have extended and deepened the comprehension about the properties of electronic states of these molecules.…”

Theoretical spectroscopic studies of InI and InI+

“…Indium iodide is used as an important additive to mercury discharge lamps [5]. In the chemical vapor deposition technique, indium monohalides act as gas phase transporters of semiconductor materials [6][7][8]. Therefore, numerous experimental and theoretical studies of the electronic structure and spectroscopic properties of indium halides have been carried out over the last few decades [9].…”