Preparation of High-Purity Indium Arsenide

Abstract

The purest indium arsenide so far reported has a carrier concentration of about 1.3.1016 electrons/cm3 at room temperature. This is several times the intrinsic value and it has been suggested that the limiting impurity may be sulfur originating in the arsenic component. Arsenic has been prepared by the thermal decomposition of highly purified arsine gas and has been combined with samples of indium purified by a variety of processes. Mass spectrographic analysis of the resultant ingots showed in all cases a sulfur content less than 0.05 ppm. The purest sample had a Hall coefficient of 795 cm3/coulomb at 77°K, corresponding to an electron concentration of 8.1015/cm3 while the Hall mobility was 75,700 cm2/v/sec. Analytical techniques failed to detect the prime source of the free electron concentration, but it is concluded that sulfur is not the dominant impurity in these samples.

Epitaxial Growth of Doped and Pure GaAs in an Open Flow System

“…It can be obtained commercially 99.9999% pure as confirmed by mass spectrographic and arc spectrographic analysis. GaCla may be obtained probably to the same level of purity but arsenic purification has always presented difficulties and many samples are found to contain sulfur (13). System (c) was chosen for this work because it has the least number of components and also AsC13 may be obtained 99.999% pure commercially and may probably be further purified by such simple procedures as fractional distillation and zone refining.…”

Sonochemical Preparation of GaSb Nanoparticles

“…The III−V (13−15) compounds are well-known electronic and optical materials . Their technological importance has stimulated the study of their preparation and properties. , Conventional routes to the synthesis of III−V semiconductors include solid state reaction, − metalorganic chemical vapor deposition (MOCVD), , molecular beam epitaxy (MBE), , and the liquid phase epitaxy (LPE) method . Recently, some new methods such as solid state metathesis (SSM), the pyrolysis of single-source precursors, , the solution−liquid−solid (SLS) process, a benzene-thermal method 16,17 and a solvothermal coreduction route have been reported.…”

Solvothermal Co-reduction Route to the Nanocrystalline III−V Semiconductor InAs

“…Conventional routes to III−V semiconductors include solid state reactions, − metalorganic chemical vapor deposition (MOCVD), , and molecular beam epitaxy (MBE). , Chemical conversion of monomeric arsinogallane to GaAs and organometallic synthesis of GaAs 6 successfully avoid toxic AsH 3 . Until very recently, a solution-liquid-solid (SLS) growth method has been developed for crystallizing III−V semiconductors at a much decreased temperature .…”