Thermally stable, high-quality ultrathin (EOT = 13 A) CVD HfAlO gate dielectrics with poly-Si gate electrode have been investigated for the first time. Results demonstrate that while in situ doping with Al significantly increases the crystallization temperature of HfO 2 up to 900 C and improves its thermal stability, it also introduces negative fixed oxide charges due to Al accumulation at the HfAlO-Si interface, resulting in mobility degradation. The effects of Al concentration on crystallization temperature, fixed oxide charge density, and mobility degradation in HfAlO have been characterized and correlated.
System-on-a-chip has received considerable attention for future CMOS techn,ology. One of the major technological requirements of system-on-achip is the ability to grow multiple gate oxide thickness simultaneously on a wafer with significantly differential oxide grlowth rate. System-on-achip has become the trend of future CMOS technologies. Combining logic circuits and several different memory elements in one chip with multiple supply voltages requires the use of multiple gate oxides or oxynitride thicknesses on the same wafer.In this paper, a novel approach to realize >500% difference in oxide growth rate is demonstrated for the first time using Vertical High Pressure (VHP) oxidation (15-25atm @ 750-800°C) and N implantation (1E14-3E15 atomdcm').
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