MOS characteristics of ultrathin CVD HfAlO gate dielectrics

Bae, S.H.; Lee, C.H.; Clark, Robert D.; Kwong, Dim‐Lee

doi:10.1109/led.2003.816578

Cited by 79 publications

(43 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, problems associated with the technology include formation of an interfacial layer with a low dielectric constant, low crystallization temperature, and the threshold voltage shift caused by the fixed charge [5][6][7][8]. Thus, incorporation of nitrogen into HfO 2 films has been researched to supplement the disadvantages of HfO 2 dielectric thin films.…”

Section: Introductionmentioning

confidence: 99%

Characterization of HfO N thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

Lee

Cho

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Characterization of HfO N thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

Lee

Cho

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

“…6,7 It is also expected that Al addition will enlarge the band gap of HfO 2 . 8 Although numerous papers have appeared in the past two years addressing the physical/electrical properties of hafnium aluminate as a gate dielectric, [9][10][11][12] the basic microstructure and electronic structure of these amorphous materials remain unclear.…”

Section: Introductionmentioning

confidence: 99%

Effect of Al addition on the microstructure and electronic structure of HfO2 film

Wang

Egerton

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

We have investigated the microstructures and electronic structures of a series of hafnium aluminate ͑HfAlO͒ films with Al concentration ranging from 0% to 100%. When the films evolve from pure HfO 2 to pure Al 2 O 3 by increasing the aluminum content, we find changes in their radial distribution functions, which disclose the short-range order of the materials, despite the amorphous nature of all films. The HfAlO films ͑with Al/ Hf ratio ranging from 0.25 to 5.8͒ appear to be a single glassy phase of Hf, Al, and O, instead of simple mixtures of HfO 2 and Al 2 O 3 . The Hf ͑Al͒-O, Hf ͑Al͒-Al, and Hf-Hf bonds are observed to be insensitive to the amount of Al in the film, except when the Al concentration is large ͑Al/ Hfϳ 5.8͒, in which case the bonding is similar to that in pure Al 2 O 3 . Although the local symmetry of Hf in amorphous HfO 2 is suggested by the electron energy-loss spectrum taken at an oxygen K edge, it is largely disrupted when Al is introduced. The valence electron energy-loss spectroscopy reveals three distinct evolving features as the Al content increases, which we discuss in terms of the electronic structure of HfO 2 .

show abstract

“…Currently, HfO 2 has emerged as one of the most promising high-j gate dielectrics for integration in CMOS devices due to its high dielectric constant, wide band gap and good thermal stability on Si [2]. However, HfO 2 have been shown to crystallize at relatively low temperatures ($400°C) [3], which leads to an increase in grain boundary leakage, inhomogeneity of the dielectric constant and variations in film thicknesses uniformity [2,4]. Recently, the incorporation of Si, Al, N or Ta into the HfO 2 film has been demonstrated to increase the crystallization temperature of HfO 2 films.…”

Section: Introductionmentioning

confidence: 99%