Characterization of HfO N  thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

Lee, Young Bok; Oh, Il‐Kwon; Cho, Edward Namkyu; Moon, Pyung; Yun, Ilgu

doi:10.1016/j.apsusc.2015.05.066

Cited by 17 publications

(5 citation statements)

References 27 publications

(46 reference statements)

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“…These results showed consistency with previously reported values of band gap with nitrogen incorporation for low concentration [28]. However for higher nitrogen content, the band gap values appeared to be lower than other few studies [29][30][31]. This difference can be explained by the different process of nitrogen incorporation, or the thin film quality.…”

Section: Energy (Ev)supporting

confidence: 92%

Hybridization of ellipsometry and XPS energy loss: Robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films

Levert,

Zakhtser,

Duval

et al. 2024

Microelectronic Engineering

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Section: Energy (Ev)supporting

confidence: 92%

Hybridization of ellipsometry and XPS energy loss: Robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films

Levert,

Zakhtser,

Duval

et al. 2024

Microelectronic Engineering

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“…1(b) indicates that the HfO x N y film is comprised of quantities of polycrystalline Hf 2 ON 2 grains. This is different form previous reports, 12,13) in which the as-deposited HfO x N y films were mostly amorphous. Even after a rapid thermal annealing process at 600 °C in N 2 ambient, no HfO 2 peak was found.…”

contrasting

confidence: 99%

Resistive switching properties of polycrystalline HfO_xN_yfilms by plasma-enhanced atomic layer deposition

Huang

Lü

et al. 2017

Jpn. J. Appl. Phys.

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Polycrystalline HfOxNy films were deposited by plasma-enhanced atomic layer deposition. Bipolar resistive switching properties were observed in the Ag/HfOxNy/Pt devices (Ag-devices) which had stable SET/RESET voltages and high high/low resistance ratios of ∼105. Pt/HfOxNy/Pt structured devices (Pt-devices) was prepared for comparison. The current–voltage characterizations and resistance temperature coefficients measurement suggested that the resistance switching is dominated by formation and rupture of Ag filaments for the Ag-devices, and is governed by formation and annihilation of oxygen vacancies for the Pt-devices. HfOxNy films are promising in the application of electrochemical metallization memories.

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“…One of the most effective methods to improve the inherent properties of HfO 2 is the incorporation of nitrogen to passivate oxygen vacancies, and it has been extensively utilized in many recent studies [47][48][49][50][51]. Significant improvement in the electrical characteristics of various high-k gate dielectrics by nitrogen incorporation has been demonstrated, and it is found that interfacial layer growth is effectively suppressed [49] and there is lower boron penetration with nitrogen incorporation [51]. Also, lower leakage current density in HfO x N y is widely reported due to suppression of oxygen vacancy traps [50].…”

Section: Development Of Ipa-based Ald Hfo 2 On N-type Ingaas Substratesmentioning

confidence: 99%

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Eom¹,

Kong²,

Seo³

2020

Recent Advances in Nanophotonics - Fundamentals and Applications

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The scope of this chapter is to introduce a highly efficient HfO2 atomic layer deposition (ALD) process with superior interface defect characteristics that can be applied on high-mobility III-V substrates. For a long time, the major academic research of III-V metal-oxide-semiconductor (MOS) studies was mainly oriented on searching for the suitable high-k dielectric, and among the reported high-k/III-V MOS studies, Al2O3 and AlN have demonstrated the most promising results. However, usually, the dielectrics with higher dielectric constant suffered from more defective interface quality including the HfO2, which should be overcome to meet the intensive operation voltage scaling requirements. In order to protect the interface of the HfO2/III-V MOS, the exposed III-V surface has to be carefully treated before, while, and after the whole high-k deposition process. For this purpose, the effect of isopropyl alcohol precursor and in situ cyclic nitrogen plasma treatment on the HfO2 ALD process at III-V substrates was thoroughly investigated. Remarkable interface state density levels with strong inversion behavior were achieved, which have not been observed at the previous HfO2/InGaAs studies. Also, detailed analysis of the interface characteristics was investigated to broaden the understanding of the improvement phenomenon.

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Characterization of HfO N thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

Cited by 17 publications

References 27 publications

Hybridization of ellipsometry and XPS energy loss: Robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films

Hybridization of ellipsometry and XPS energy loss: Robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films

Resistive switching properties of polycrystalline HfO_xN_yfilms by plasma-enhanced atomic layer deposition

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

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Characterization of HfO N thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

Cited by 17 publications

References 27 publications

Hybridization of ellipsometry and XPS energy loss: Robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films

Hybridization of ellipsometry and XPS energy loss: Robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films

Resistive switching properties of polycrystalline HfOxNyfilms by plasma-enhanced atomic layer deposition

Development and Characterization of High-Quality HfO2/InGaAs MOS Interface

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Product

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Resistive switching properties of polycrystalline HfO_xN_yfilms by plasma-enhanced atomic layer deposition

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface