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A leading edge 90 nm technology with 1.2 nm physical gate oxide, SO nm gate length, strained silicon, NiSi, 7 layers of Cu interconnects, and low k CDO for high performance dense logic is presented. Strained silicon is used to increase saturated NMOS and PMOS drive currents by 10-20% and mobility by > 50%. Aggressive design rules and unlanded contacts offer a l.0pm2 6-T S R A M cell using 193nm lithography. IntroductionThe power dissipation of modern microprocessors has been rapidly increasing, driven by increasing transistor count and clock frequencies. The rapidly increasing power has occurred even though the power per gate switching transition has decreased approximately (0.7)' per technology node due to voltage scaling and device area scaling. Figure 1 shows these trends for Intel's microprocessors and CMOS logic technology generations. In this paper we describe a 90 nm generation technology designed for high speed and low power operation. Strained silicon channel transistors are used to obtain the desired performance at 1.0V to 1.2V operation. renw 5 B 0 n 1 0 0 0 0~ Pentiud U) E 1.5 1 0.8 0.6 0.35 0.25 0.18 0.13 Technology (pm) Figure 1: Power and transistor switching energy trends. procesS Flow and Technology FeaturesFront-end technology features include shallow trench isolation, retrograde wells, shallow abrupt sourceldrain extensions, halo implants, deep sourcddrain, and nickel salicidation. N-wells and P-wells are formed with deep phosphw rous and shallow arsenic implants, and boron implants respectively. The trench isolation is 400 nm deep to provide robust inma-and inter-well isolation for N+ to P+ spacing below 240 nm while maintaining low junction capacitance. Sidewall spacers are formed with CVD Si,N4 deposition, followed by etch-back. Shallow sourcedrain extension regions are formed with arsenic for NMOS and boron for PMOS. Nisi is formed on poly-silicon gate and source-drain regions to provide low contact resistance.

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The slip effects of water flow in hydrophilic and hydrophobic microchannels of 1 and 2 μm depth are examined experimentally. Fabrication processes for silicon/Pyrex microchannels were chosen to ensure good control of the channel height and to obtain atomically smooth surfaces. Hydrophilic surfaces were prepared with an RCA-1 cleaning, while hydrophobic surfaces were created by coating the channel surface with the self-assembled monolayer of octadecyltrichorosilane (OTS). The flow rates of pure DI water at various applied pressure differences for each surface condition were measured using a high precision flow metering system and it was observed that the flow rates in hydrophobic channels is larger than in the same hydrophilic channel. The increase of the flow rate can be explained by assuming a slip velocity at the wall. The slip effects become more pronounced as the channel height decreases and the wall shear rate increases. The slip length was found to vary as approximately the square root of the shear rate and had values of approximately 40 nm in the hydrophobic channels and 15 nm in the hydrophilic channels at a shear rate of 105 s−1.

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Sphingosine 1-phosphate (S1P) functions as a ligand for the S1P/EDG family receptors. For years, intracellular signaling roles for S1P have also been suggested, especially in cell proliferation. Now, we have generated several mouse F9 embryonic carcinoma cell lines varying in expression of the S1P-degrading enzyme, S1P lyase (SPL) and/or sphingosine kinase (SPHK1). All these cell lines accumulated S1P compared to the wild-type F9 cells, but the amounts varied. We investigated the ability of these cells to proliferate under low serum conditions, as measured by a thymidine uptake assay. Although F9 cells over-expressing SPHK1 did exhibit enhanced DNA synthesis, other S1P-accumulating cells ( SPL -null cells and SPL -null cells over-expressing SPHK1) did not. The overproduction of both SPL and SPHK1 resulted in the most striking mitogenic effect. Moreover, nM concentrations of sphingosine (or dihydrosphingosine) stimulated DNA synthesis in an SPL -dependent manner. These results indicate that products by the SPL pathway, not S1P itself, function in mitogenesis.

Transition metal carbides, called MXenes, can be used for MXene‐based unique electronic devices such as new types of batteries, energy storage devices, and supercapacitors, where MXene is used as an electrode. The unique surface properties of MXene and 2D structure can be further applied to the new electronic devices. In this paper, the unique insulating properties of partially oxidized MXene (Ti3C2Tx) sheets are utilized for memory storage and electronic synapse applications. The device exhibits threshold resistive switching characteristics based on Ag+ migration dynamics. It is found that this Ag+ cation migration is similar to Ca2+ ion dynamics of a biological synapse, and thus, biological synapse functions such as intrusion/extrusion of Ag+ cation, paired‐pulse facilitation (PPF), post‐tetanic potentiation (PTP), short‐term potentiation (STP), and transition of STP to long‐term potentiation (LTP) are well‐emulated. It is believed that this device development can be potentially used in the next‐generation hardware‐based artificial intelligence systems.