Time-dependent dielectric breakdown in poly-Si CVD HfO/sub 2/ gate stack

Lee, S.J.; Lee, C.H.; Choi, Changhwan; Kwong, Dim‐Lee

doi:10.1109/relphy.2002.996671

Cited by 8 publications

(4 citation statements)

References 21 publications

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“…The activation energy is also reported to vary with electric field [25], [27], [28] and for the Si MOS system, these reports range from about 0.4-1.3 eV for SiO2. The choice of dielectric also plays a role in the activation energy, as reports of activation energies in SiN MIM capacitors are quite different from those of SiO2 [16], [29], [30] and high-k dielectrics [31], [32]. There have been very few studies on the temperature dependence of TDDB in the GaN MIS-HEMT system and only reports of an activation energy of 0.24 eV could be found [5], [13].…”

Section: Understanding the Role Of Temperaturementioning

confidence: 99%

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Warnock

Lemus

Joh

et al. 2017

IEEE Trans. Electron Devices

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Section: Understanding the Role Of Temperaturementioning

confidence: 99%

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Warnock

Lemus

Joh

et al. 2017

IEEE Trans. Electron Devices

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“…According to some authors, the three above-mentioned breakdown occurrences observed in the Si01 also appears in high-k dielectrics [3,13]. The first is a noise increase so called the PBD and the second, a fast increase of gate current which can be hard or soft.…”

Section: B Phenomenological Sludymentioning

confidence: 99%

High-K dielectrics breakdown accurate lifetme assessment methodology

Ribes

Bruyère

Denais

et al.

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

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High-k gate dielectric, particularly HI-based msterials, are likely to be implemented in CMOS advanced technologies. One of the important challenges in integrating these materials is to achieve lifetimes equal or better than their Si01 counterparts. Reliabilic of highk structures i s influenced both by the interfacial layer as well as the highk layer. In this paper we propose an accurate statistics1 analysis of the breakdown linking the progressive breakdown to the breakdown of the interfacial lager and the SBD or HBD to the high-k layer breakdown.The breakdown of the two layers are found to be independent. Based on this analysis we study the degradation mechanisms and we demonstrate that the multi vibrational hvdrogen release (MVHR) process is the prevalent mechanism which drives the creation of percolation path through the interfacial layer.

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“…The actual precursor 100 of SBD and of HBD is socalled Progressive Breakdown (PBD), characterized (at least in SiO 2 films thinner than about 2.5 nm) by an increase in the noise level 101 . Figure 12 illustrates these three breakdown modes; they occur in SiO 2 as well as in high-k dielectrics 102,103,105,104 . Interestingly, although PBD and SBD events follow Weibull statistics, their Weibull slopes differ 102,105 , whereby PBD has a smaller slope.…”

Section: Hard Soft and Progressive Breakdownmentioning

confidence: 99%

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

Dąbrowski¹,

Miyazaki

Inumiya

et al. 2008

MSF

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Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

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Time-dependent dielectric breakdown in poly-Si CVD HfO/sub 2/ gate stack

Cited by 8 publications

References 21 publications

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

High-K dielectrics breakdown accurate lifetme assessment methodology

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

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