High-k gate dielectric, particularly HI-based msterials, are likely to be implemented in CMOS advanced technologies. One of the important challenges in integrating these materials is to achieve lifetimes equal or better than their Si01 counterparts. Reliabilic of highk structures i s influenced both by the interfacial layer as well as the highk layer. In this paper we propose an accurate statistics1 analysis of the breakdown linking the progressive breakdown to the breakdown of the interfacial lager and the SBD or HBD to the high-k layer breakdown.The breakdown of the two layers are found to be independent. Based on this analysis we study the degradation mechanisms and we demonstrate that the multi vibrational hvdrogen release (MVHR) process is the prevalent mechanism which drives the creation of percolation path through the interfacial layer.
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