Evidence for hydrogen-related defects during NBTl stress in p-MOSFETs

Development of an Ultrafast On-the-Fly $I_{\rm DLIN}$ Technique to Study NBTI in Plasma and Thermal Oxynitride p-MOSFETs

“…Although not the primary focus of this paper, the clear T dependence of ΔV seen for the PNO1 device, particularly at an early stress time, suggests interface-trap-generation (ΔN IT )-driven NBTI for these films [7], [8], [10]- [14]. On the other hand, the large T -independent degradation observed for RTNO devices indicates that hole trapping (ΔN h ) plays an equally important (or perhaps dominant) role for these films [12], as also independently suggested by others [4], [5], [29]. Finally, we wish to point out that PNO films that were not subjected to optimal PNA show a very large T -independent degradation at the early stress time, similar to those reported in [28], which is most likely due to significant hole trapping such as in the RTNO devices.…”

Defect Generation in p-MOSFETs Under Negative-Bias Stress: An Experimental Perspective

“…is observed for thicker TNO samples (as also reported in [22]- [24]), which increases the magnitude but reduces n and E A of overall measured ∆V T during NBTI stress. 3) The above conclusions are based on on-the-fly (OTF) I DLIN measurements (I DLIN degradation is monitored without removing stress [33]) with 1-ms initial (timezero) delay [35].…”

The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique

“…On the other hand, ∆N h is believed to be due to tunneling of inversion layer holes into N-related traps (:N) in the insulator bulk. As mentioned before, ∆N h is presumed to be a much faster process than ∆N IT [24], [26], shows log time dependence, and has much weaker (compared with ∆N IT ) T dependence for long stress time [21]- [26]. Due to higher tunnel-in and lower tunnel-out hole transmission coefficients (shown by arrows in and out of :N, see Fig.…”

“…Some believe that NBTI is primarily due to interface trap generation (∆N IT ) [13], [14], [16], [19], others believe that it is due to hole trapping (∆N h ) in (N-related) preexisting traps in the gate insulator [21]- [24], [26], whereas some others invoke both ∆N IT and ∆N h to explain experimental results [15], [25]. While ∆N IT is a gradual process that builds up as a power law (t n ) in time and shows strong temperature (T ) activation, ∆N h is presumed to be quite fast, shows log time dependence for long stress time, and has weak or negligible T activation.…”