Abstract-An ultrafast on-the-fly technique is developed to study linear drain current (I DLIN ) degradation in plasma and thermal oxynitride p-MOSFETs during negative-bias temperature instability (NBTI) stress. The technique enhances the measurement resolution ("time-zero" delay) down to 1 μs and helps to identify several key differences in NBTI behavior between plasma and thermal films. The impact of the time-zero delay on time, temperature, and bias dependence of NBTI is studied, and its influence on extrapolated safe-operating overdrive condition is analyzed. It is shown that plasma-nitrided films, in spite of having higher N density, are less susceptible to NBTI than their thermal counterparts.Index Terms-Field acceleration, negative-bias temperature instability (NBTI), plasma oxynitride, p-MOSFET, safe-operating voltage, temperature activation, thermal oxynitride, time exponents.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.