Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) I&lt;inf&gt;DLIN&lt;/inf&gt; Technique

Kumar, E. Naveen; Maheta, V.D.; Purawat, S.; Islam, Ahmad E.; Olsen, C.; Ahmed, K.; Alam, M. A.; Mahapatra, S.

doi:10.1109/iedm.2007.4419071

Cited by 43 publications

(68 citation statements)

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“…For comparison, PNO SiON devices (identical starting base oxide thickness but different N dose that results in different Si/SiON interfacial N density) and RTNO SiON device (having highest interfacial N density) were also studied. The details of UF-OTF measurement setup has been presented elsewhere [4].…”

Section: Resultsmentioning

confidence: 99%

“…In this letter, NBTI stress-induced degradation in HfSiO x and HfO 2 p-MOSFETs with SiO 2 (N) interlayer (IL) and TiN gate is studied using the UF-OTF I DLIN method [4]. The time and T dependence of degradation at short (submillisecond) stress time is shown to be significantly different for HfO 2 as compared to HfSiO x devices.…”

Section: Introductionmentioning

confidence: 99%

“…UF-OTF can be used to determine degradation from very short (approximately microseconds) to long stress time, although it requires postprocessing to convert I DLIN degradation to V T shift as discussed in [12]. However, while NBTI in SiON p-MOSFETs has been studied using UF-SMS or UF-OTF techniques [4], [11], [13], to the best of our knowledge, most studies of NBTI in high-k p-MOSFETs [5]- [8] were done using conventional SMS and calls for a reevaluation by UF methods, particularly to probe the degradation at early stress time and to have recovery-artifact-free degradation at longer stress time.…”

Section: Introductionmentioning

confidence: 99%

“…is a serious reliability concern in p-MOSFETs having Si-oxynitride (SiON) [1]- [4] and high-k [5]- [8] gate dielectrics. It is now well known that defects generated during NBT stress recovers after stress is removed, and conventional stress-measure-stress (SMS) methods suffer from recovery-related artifacts that result in incorrect degradation magnitude, time, and temperature (T ) dependence of NBTI [9], [10].…”

Section: Introductionmentioning

confidence: 99%

“…It is now well known that defects generated during NBT stress recovers after stress is removed, and conventional stress-measure-stress (SMS) methods suffer from recovery-related artifacts that result in incorrect degradation magnitude, time, and temperature (T ) dependence of NBTI [9], [10]. To overcome this issue, ultrafast (UF) SMS [11] and UF on-the-fly (UF-OTF) I DLIN [4] techniques were developed. UF-SMS provides direct estimation of V T shift, although it cannot be used to measure degradation at very short stress time.…”

Section: Introductionmentioning

confidence: 99%

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A Comparative NBTI Study of $\hbox{HfO}_{2}$, $\hbox{HfSiO}_{x}$, and SiON p-MOSFETs Using UF-OTF $I_{\rm DLIN}$ Technique

Deora

Maheta

Bersuker

et al. 2009

IEEE Electron Device Lett.

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Abstract-The time, temperature, and oxide-field dependence of negative-bias temperature instability is studied in HfO 2 /TiN, HfSiO x /TiN, and SiON/poly-Si p-MOSFETs using ultrafast on-the-fly I DLIN technique capable of providing measured degradation from very short (approximately microseconds) to long stress time. Similar to rapid thermal nitrided oxide (RTNO) SiON, HfO 2 devices show very high temperature-independent degradation at short (submilliseconds) stress time, not observed for plasma nitrided oxide (PNO) SiON and HfSiO x devices. HfSiO x shows lower overall degradation, higher long-time power-law exponent, field acceleration, and temperature activation as compared to HfO 2 , which are similar to the differences between PNO and RTNO SiON devices, respectively. The difference between HfSiO x and HfO 2 can be attributed to differences in N density in the SiO 2 IL of these devices.Index Terms-Activation energy, field acceleration, high-k dielectric, hole trapping, interface traps, negative-bias temperature instability (NBTI), plasma oxynitride, p-MOSFET, thermal oxynitride, time exponent.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%