Comparison of Negative Bias Temperature Instability in HfSiO(N)/TaN and SiO(N)/poly-Si pMOSFETs

Maheta, V.D.; Purawat, S.; Gupta, Gaurav

doi:10.1109/ipfa.2007.4378064

Cited by 1 publication

(1 citation statement)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is also important to note that measured n is independent of the HfSiO x layer thickness. Finally, note that while UF-OTF shows a saturated slope of n~0.11, conventional OTF [17] with t 0~1 ms in these stacks would yield n~0.13-0.14, identical to previous reports [18]. Therefore, the lower value of n obtained from UF-OTF gives a larger extrapolated lifetime compared to conventional OTF technique as shown later in this paper.…”

Section: A Device and Measurement Detailssupporting

confidence: 85%

A study of NBTI in HfSiON/TiN p-MOSFETs using ultra-fast on-the-fly (UF-OTF) I<inf>DLIN</inf> technique

Deora

Mahapatra

2008

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits

View full text Add to dashboard Cite

Figure .1 Time evolution of ΔV from ultra fast on the fly IDLIN technique for different t0 delay for (a)2nm HfSiOx and (b)3nm HfSiOx under identical stress field and temperature.Abstract-Negative Bias Temperature Instability (NBTI) is studied in HfSiON/TiN p-MOSFETs having thin (2nm) and thick (3nm) HfSiON layer on top of 1nm SiO 2 interfacial layer. By using ultra fast on the fly I DLIN technique, the impact of stress temperature (T) and oxide field (E OX ) on NBTI time evolution is studied. The thickness of the HfSiON layer is shown to have negligible impact on time, T and E OX dependence of NBTI. The impact of time-zero (t 0 ) delay on power law time exponent (n), E OX acceleration (Γ) of degradation and E OX acceleration (β) of time to fail (tt F ) is also studied. The t 0 does not impact Γ but strongly impacts n, β and hence extracted safe operating voltage (V GSAFE ).

show abstract

Section: A Device and Measurement Detailssupporting

confidence: 85%