A study of NBTI in HfSiON/TiN p-MOSFETs using ultra-fast on-the-fly (UF-OTF) I<inf>DLIN</inf> technique

Abstract

Figure .1 Time evolution of ΔV from ultra fast on the fly IDLIN technique for different t0 delay for (a)2nm HfSiOx and (b)3nm HfSiOx under identical stress field and temperature.Abstract-Negative Bias Temperature Instability (NBTI) is studied in HfSiON/TiN p-MOSFETs having thin (2nm) and thick (3nm) HfSiON layer on top of 1nm SiO 2 interfacial layer. By using ultra fast on the fly I DLIN technique, the impact of stress temperature (T) and oxide field (E OX ) on NBTI time evolution is studied. The thickness of the HfSiON layer is shown to have negligible impact on time, T and E OX dependence of NBTI. The impact of time-zero (t 0 ) delay on power law time exponent (n), E OX acceleration (Γ) of degradation and E OX acceleration (β) of time to fail (tt F ) is also studied. The t 0 does not impact Γ but strongly impacts n, β and hence extracted safe operating voltage (V GSAFE ).