An improved analysis of low frequency trapping noise in a MOS device is proposed. This analysis takes into account the supplementary fluctuations of the mobility induced by those of the interface charge. It enables an adequate description of the gate voltage dependence of the input equivalent gate voltage noise to be obtained in various actual situations. The outputs given by the Hooge mobility fluctuation model are also presented and discussed with respect to those obtained by the carrier number fluctuation model. In particular, the impact of the channel length or channel width, and the model type on the input gate voltage and drain current noise characteristics is studied and compared to typical experimental data. Finally, a procedure for the diagnosis of the low frequency noise sources in a MOS transistor is proposed.

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A new method for the description and classification of subaqueous sediment gravity flow deposits is proposed. The classification scheme employs a convenient letter code and divides deposits (individual beds) into descriptive categories of two hierarchical levels: facies and subfacies. Facies, as the higher rank categories, are distinguished chiefly on the basis of sediment type (i.e. bed grain size/texture). A total of 13 facies have been distinguished: G= gravel; GS = gravel‐sand couplet; GyS = gravelly sand; S = sand; SM = sand—mud couplet; MS = mud—sand couplet; TM = silt—mud couplet; MT = mud—silt couplet; M = mud; MyS = muddy sand; SyM = sandy mud; MyG = muddy gravel; GyM = gravelly mud. Subfacies, as the lower rank categories, are distinguished within the individual facies on the basis of the bed's internal structures. The number of subfacies is unlimited, and their labelling code includes particular facies symbols (see above) preceded by lower—case letters denoting specific sedimentary structures and their vertical arrangement. Subfacies thus refer to the bed's intervals, or divisions, which are labelled as follows: m = massive (unstratified and ungraded); g = graded (unstratified and graded); s = plane‐stratified; x=cross‐stratified; 1 = parallel– and/or cross‐laminated; q = liquefied. For example, subfacies gsG (graded to plane‐stratified gravel) are gravel beds that have a lower graded interval and an upper plane‐stratified interval; subfacies xG (cross‐stratified gravel) are gravel beds that are cross‐stratified throughout; subfacies slS (plane‐stratified to laminated sand) are sand beds that have a lower plane‐stratified interval and an upper laminated (parallel‐ and/or cross‐laminated) interval.

Organic field-effect transistors (OFETs) suffer from limitations such as low mobility of charge carriers and high access resistance. Direct and accurate evaluation of these quantities becomes crucial for understanding the OFETs properties. We introduce the Y function method (YFM) to pentacene OFETs. This method allows us to evaluate the low-field mobility without the access or contact resistance influence. The low-field mobility is shown to be more appropriate than the currently applied field-effect mobility for the OFETs’ performance evaluation. Its unique advantage is to directly suppress the contact resistance influence in individual transistors, although such contact resistance is a constant as compared to the widely accepted variable one with respect to the gate voltage. After a comparison in detail with the transmission-line method, the YFM proved to be a fast and precise alternative method for the contact resistance evaluation. At the same time, how the contact resistance affects the effective mobility and the field-effect mobility in organic transistors is also addressed.

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A modified transmission-line method (TLM) for organic transistors contact resistance extraction is proposed. It is shown that the issues of conventional TLM reside in the channel resistance scattering due to parameter variations. These difficulties are overcome in the modified TLM, in which the linear regression slope is directly controlled by the contact resistance rather than by the channel resistance as in conventional TLM. Much smaller transistor-to-transistor dispersion of contact resistance results in a more stable and more reliable extraction method. Moreover, an error study by simulation has been carried out, confirming the greater accuracy of the modified TLM.