Electrical noise and RTS fluctuations in advanced CMOS devices

Ghibaudo, G.; Boutchacha, T.

doi:10.1016/s0026-2714(02)00025-2

Cited by 343 publications

(240 citation statements)

References 60 publications

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“…11 These values are similar to those typical in state-ofthe-art bulk transistors and considerably smaller than in high-k MOSFETs where N t =10 19 -10 20 cm −3 eV −1 . [12][13][14] The value of ␣ C ranges from 1.1ϫ 10 4 to 5.1ϫ 10 5 V s/ C, indicating that CMF play an important role in the high current region. 11 It can be assumed that these mobility fluctuations are due to Coulombic scattering by charged traps.…”

Section: Low-frequency Noise In Junctionless Multigate Transistorsmentioning

confidence: 99%

Low-frequency noise in junctionless multigate transistors

Jang

Lee

et al. 2011

Applied Physics Letters

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Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas the conduction is mainly limited by the bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers is related not only to the oxide-semiconductor interface but also to the depleted channel. The volume trap density is in the range of 6-30 x 10(16) cm(-3) eV(-1), which is similar to Si-SiO2 bulk transistors and remarkably lower than in high-k transistors. These results show that the noise in nanowire devices might be affected by additional trapping centers. (C) 2011 American Institute of Physics. (doi:10.1063/1.3569724

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Section: Low-frequency Noise In Junctionless Multigate Transistorsmentioning

confidence: 99%

Low-frequency noise in junctionless multigate transistors

Jang

Lee

et al. 2011

Applied Physics Letters

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“…For mathematical simplicity we will assume that 2 − α s = 4ξ s in Eqs. (8). In such symmetric case the scaling Eqs.…”

Section: Magnetic Field Dependencementioning

confidence: 98%

“…Examples of such systems and techniques in solid state include quantum dots 1 , superconducting qubits 2 , magnetic resonant force microscopy 3 , and single electron traps in a metal-oxidesemiconductor field effect transistor (MOSFET) [4][5][6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

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Charge dynamics and Kondo effect in single-electron traps in field-effect transistors

Martin

2005

Phys. Rev. B

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We study magneto-electric properties of single electron traps in metal-oxide-semiconductor field effect transistors. Using a microscopic description of the system based on the single-site AndersonHolstein model, we derive an effective low energy action for the system. The behavior of the system is characterized by simultaneous polaron tunneling (corresponding to the charging and discharging of the trap) and Kondo screening of the trap spin in the singly occupied state. Hence, the obtained state of the system is a hybrid between the Kondo regime, typically associated with single electron occupancy, and the mixed valence regime, associated with large charge fluctuations. In the presence of a strong magnetic field, we demonstrate that the system is equivalent to a two level-level system coupled to an Ohmic bath, with a bias controlled by the applied magnetic field. Due to the Kondo screening, the effect of the magnetic field is significantly suppressed in the singly occupied state. We claim that this suppression can be responsible for the experimentally observed anomalous magnetic field dependence of the average trap occupancy in Si − Si02 field effect transistors.

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“…In the previous works based on Shockley-Read-Hall model [5], the theoretical foundation of RTS noise, a probability density function (PDF) or a noise power spectral density (P.S.D) function of the observed signal used to be calculated in time domain [6]- [8] or in frequency domain [4], [9]- [11]. Besides, Konczakowska [3], [12] proposes a novel approach to identify RTS noise of semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

A Novel Modeling and Evaluating for RTS Noise on CMOS Image Sensor in Motion Picture

Deng

Ryu

Nishimura

2010

IEICE Trans. Inf. & Syst.

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SUMMARYThe precise noise modeling of complementary metal oxide semiconductor image sensor (CMOS image sensor: CIS) is a significant key in understanding the noise source mechanisms, optimizing sensor design, designing noise reduction circuit, and enhancing image quality. Therefore, this paper presents an accurate random telegraph signal (RTS) noise analysis model and a novel quantitative evaluation method in motion picture for the visual sensory evaluation of CIS. In this paper, two main works will be introduced. One is that the exposure process of a video camera is simulated, in which a Gaussian noise and an RTS noise in pinnedphotodiode CMOS pixels are modeled in time domain and spatial domain; the other is that a new video quality evaluation method for RTS noise is proposed. Simulation results obtained reveal that the proposed noise modeling for CIS can approximate its physical process and the proposed video quality evaluation method for RTS noise performs effectively as compared to other evaluation methods. Based on the experimental results, conclusions on how the spatial distribution of an RTS noise affects the quality of motion picture are carried out. key words: CMOS image sensor, noise modeling, random telegraph signal noise, video quality

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Electrical noise and RTS fluctuations in advanced CMOS devices

Cited by 343 publications

References 60 publications

Low-frequency noise in junctionless multigate transistors

Low-frequency noise in junctionless multigate transistors

Charge dynamics and Kondo effect in single-electron traps in field-effect transistors

A Novel Modeling and Evaluating for RTS Noise on CMOS Image Sensor in Motion Picture

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