A Novel Modeling and Evaluating for RTS Noise on CMOS Image Sensor in Motion Picture

Abstract

SUMMARYThe precise noise modeling of complementary metal oxide semiconductor image sensor (CMOS image sensor: CIS) is a significant key in understanding the noise source mechanisms, optimizing sensor design, designing noise reduction circuit, and enhancing image quality. Therefore, this paper presents an accurate random telegraph signal (RTS) noise analysis model and a novel quantitative evaluation method in motion picture for the visual sensory evaluation of CIS. In this paper, two main works will be introduced. One is that the exposure process of a video camera is simulated, in which a Gaussian noise and an RTS noise in pinnedphotodiode CMOS pixels are modeled in time domain and spatial domain; the other is that a new video quality evaluation method for RTS noise is proposed. Simulation results obtained reveal that the proposed noise modeling for CIS can approximate its physical process and the proposed video quality evaluation method for RTS noise performs effectively as compared to other evaluation methods. Based on the experimental results, conclusions on how the spatial distribution of an RTS noise affects the quality of motion picture are carried out. key words: CMOS image sensor, noise modeling, random telegraph signal noise, video quality

A Computational Model of a Single-Photon Avalanche Diode Sensor for Transient Imaging

“…Time jitter has been analytically implemented using an exponentially modified Gaussian distribution [Jeansonne and Foley 1991] or by linear blending between both independent distributions [Zhang et al 2009]. However, since we have access to actual measurements of the sensor, we choose for a data driven approach where tj is implemented as a tabulated pdf.…”

Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution

“…As the channel length of the metal-oxide-semiconductor field-effect transistor (MOSFET) continues to scale down to the nanoscale, the random telegraph signal (RTS) noise in the pixel source follower (SF) MOSFET has become an important issue to limit the sensitivity of the CMOS image sensor in the low light applications. [1][2][3][4][5][6][7][8] The physical origin of the RTS noise in SF is that the carriers are captured and released randomly by the traps located in the gate oxide or at the Si/SiO 2 interfaces. Since the RTS noise is not fully correlated in the time domain, it cannot be completely eliminated by the correlated double sampling (CDS) circuit of the CMOS image sensor (CIS).…”

“…Statistics is one of the most efficient ways to set up a noise model, and a great deal of effort has been made to model the RTS noise in the CMOS image sensor with the statistical analysis. [1,2,[6][7][8] However, the proposed statistical models in the literature [1,6,8] are not connected with the physical mechanism of the RTS noise. References [2] and [7] used the statistical methods to describe the physical mechanism of the RTS noise.…”