Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors

Ghibaudo, G.; Roux, O.; Nguyen-Duc, Ch.; Balestra, F.; Brini, J.

doi:10.1002/pssa.2211240225

Cited by 704 publications

(507 citation statements)

References 16 publications

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“…1,2 In metal-oxide-semiconductor field effect transistors ͑MOSFETs͒, which are generally operated in inversion-mode ͑surface conduction͒, the CNFs stem from carrier trapping/release at oxide-semiconductor interface, whereas the HMFs could prevail for bulk operated devices. [3][4][5] Recently, a proposed device without any junctions between the channel and the source/drain, called the "junctionless transistor" ͑JLT͒ has been proposed to overcome some issues such as short-channel effects. 6 The JLT is fully depleted below threshold.…”

Section: Low-frequency Noise In Junctionless Multigate Transistorsmentioning

confidence: 99%

“…͑1͒ and the other is based on the number fluctuation of charge carriers correlated with mobility fluctuations ͑CNF+ CMF͒. 5,10 The mobility fluctuations are due to Coulombic scattering by trapped charges. Unlike the HMF model for bulk conduction, the CNF+ CMF model is well defined for surface conduction, and the noise can be expressed by,…”

Section: Low-frequency Noise In Junctionless Multigate Transistorsmentioning

confidence: 99%

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Low-frequency noise in junctionless multigate transistors

Jang

Lee

et al. 2011

Applied Physics Letters

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Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas the conduction is mainly limited by the bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers is related not only to the oxide-semiconductor interface but also to the depleted channel. The volume trap density is in the range of 6-30 x 10(16) cm(-3) eV(-1), which is similar to Si-SiO2 bulk transistors and remarkably lower than in high-k transistors. These results show that the noise in nanowire devices might be affected by additional trapping centers. (C) 2011 American Institute of Physics. (doi:10.1063/1.3569724

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Section: Low-frequency Noise In Junctionless Multigate Transistorsmentioning

confidence: 99%

Section: Low-frequency Noise In Junctionless Multigate Transistorsmentioning

confidence: 99%

Low-frequency noise in junctionless multigate transistors

Jang

Lee

et al. 2011

Applied Physics Letters

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“…͑1͒ into two separate components, i.e., one without the influence of charges and one with the influence of charges. Assuming at present that the scattering parameter ͑␣͒ is independent of the temperature, the relationship can be described as follows: 20 …”

Section: ͑1͒mentioning

confidence: 99%

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Negara

Cherkaoui

Hurley

et al. 2009

Journal of Applied Physics

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We report a new analysis of electron mobility in HfO 2 / TiN gate metal-oxide-semiconductor field effect transistors ͑MOSFETs͒ by investigating the influence of HfO 2 thickness ͑1.6-3 nm͒, temperature ͑50-350 K͒, and oxide charge ͑ϳ1 ϫ 10 11 -8ϫ 10 12 cm −2 ͒ in the high inversion charge region. The fixed oxide charge and interface state densities are deliberately increased using negative-bias-temperature stress, allowing the determination of the Coulomb scattering term as a function of temperature for various oxide charge levels. The temperature dependence of the Coulomb scattering term is consistent with the case of a strongly screened Coulomb potential. Using the experimentally determined temperature dependence of Coulomb scattering term, a model is developed for the electron mobility, including the effects oxide charge ͑ C ͒, high-k phonon ͑ Ph-Hk ͒, silicon phonon ͑ Ph-Si ͒, and surface roughness scattering ͑ SR ͒. The model provides an accurate description of the experimental data for variations in HfO 2 thickness, temperature, and oxide charge. Using the model the relative contributions of each mobility component are presented for varying oxide charge and high-k thickness. Scaling of the HfO 2 physical thickness provided a reduction in the oxide charge and high-k phonon scattering mechanisms, leading to an increase in electron mobility in HfO 2 / TiN gate MOSFETs.

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“…It is well-known that the sensitivity (defined as DI/I for a current based sensing experiment) is maximized in the subthreshold regime. [4][5][6] However, it is also known that the normalized current noise power amplitude (S I /I 2 ) reaches a plateau and is highest in the subthreshold regime for siliconsilicon oxide devices 7,8 and concerns have been expressed that signal-to-noise ratio (SNR) would be impacted for measurements carried out in subthreshold. 4,9 On the other hand, S I /I 2 is lower in the linear regime but the sensitivity is also lower.…”

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confidence: 99%

Optimal signal-to-noise ratio for silicon nanowire biochemical sensors

Rajan

Routenberg

Reed

2011

Applied Physics Letters

105

100

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The signal-to-noise ratio (SNR) for silicon nanowire field-effect transistors operated in an electrolyte environment is an essential figure-of-merit to characterize and compare the detection limit of such devices when used in an exposed channel configuration as biochemical sensors. We employ low frequency noise measurements to determine the regime for optimal SNR. We find that SNR is not significantly affected by the electrolyte concentration, composition, or pH, leading us to conclude that the major contributions to the SNR come from the intrinsic device quality. The results presented here show that SNR is maximized at the peak transconductance. Silicon nanowire field-effect transistors (SiNW-FET) have shown great sensitivity when employed as biological/ chemical sensors (bioFETs). [1][2][3] The principle of operation is that a charged species bound to the nanowire (NW) surface (modified with some receptor molecules) induces a change in surface potential at the NW surface, which translates into a change in drain-to-source current (DI) which is then measured. It is well-known that the sensitivity (defined as DI/I for a current based sensing experiment) is maximized in the subthreshold regime. 4-6 However, it is also known that the normalized current noise power amplitude (S I /I 2 ) reaches a plateau and is highest in the subthreshold regime for siliconsilicon oxide devices 7,8 and concerns have been expressed that signal-to-noise ratio (SNR) would be impacted for measurements carried out in subthreshold. 4,9 On the other hand, S I /I 2 is lower in the linear regime but the sensitivity is also lower. In order to determine the ideal regime for optimal SNR, we carry out both I-V and noise measurements for solution gated devices. Our measurements indicate that the current noise is independent of electrolyte concentration, composition, or pH, leading us to conclude that the intrinsic electronic properties of the SiNW bioFETs determine the optimal SNR achievable by these sensors. We also find that SNR is maximized in the linear regime at the point where the transconductance is largest.The SiNWs were fabricated from SOI wafers (Soitec) with a high resistivity boron doped active layer (>2000 ohm cm) as described previously. 10 Devices used for the experiments were nominally 100 nm wide and 5 lm long. The devices were covered with a passivation layer of SU-8 (an epoxy based negative photoresist) with windows opened for the NW channel and the contact pads. An optical micrograph of the devices is shown in Fig. 1(b). The NW surfaces were functionalized with a monolayer of APTES (3-aminopropyltriethoxysilane) using the protocol described earlier, 11 which increases device stability and reduces gate leakage current in solution. A fluidic well was then glued on top of each chip for the sensing experiments, with a platinum wire used as the solution gate electrode. The device structure and experimental setup is shown schematically in Fig. 1(a). For all noise and transfer characteristics measurements, the back-gate contact was l...

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Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors

Cited by 704 publications

References 16 publications

Low-frequency noise in junctionless multigate transistors

Low-frequency noise in junctionless multigate transistors

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Optimal signal-to-noise ratio for silicon nanowire biochemical sensors

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