Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Warnock, Shireen; Lemus, Allison; Joh, Jungwoo; Krishnan, S.; Pendharkar, S.; Alamo, J.A. del

doi:10.1109/ted.2017.2717924

Cited by 14 publications

(8 citation statements)

References 38 publications

(52 reference statements)

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“…The role of temperature is also similar under AC and DC stress. As T increases, I G increases as expected and the time to breakdown decreases [3].…”

Section: Resultssupporting

confidence: 73%

“…The devices under study are industrially prototyped depletion-mode AlGaN/GaN MIS-HEMTs grown on Si substrate. Previous DC stress studies on these devices revealed a gate insulator breakdown behavior consistent with TDDB in both forward bias (V GS,Stress > 0, V DS = 0 V) and reverse bias (V GS,Stress < V t , V DS > 0 and large) [3], [5], [6].…”

Section: Methodsmentioning

confidence: 52%

“…There has recently been great progress in understanding TDDB in GaN FETs. Like in Si, TDDB in GaN has been shown to follow Weibull statistics and electric field scaling [3], [4]. In addition, it has also been shown that the percolation model, where TDDB is thought to happen when a conduction path is formed by an overlapping of defects generated at random in the dielectric, applies to the GaN MIS-HEMT system [5].…”

Section: Introductionmentioning

confidence: 99%

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Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Lee

Hurtado

Joh

et al. 2019

2019 IEEE International Reliability Physics Symposium (IRPS)

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“…The role of temperature is also similar under AC and DC stress. As T increases, I G increases as expected and the time to breakdown decreases [3].…”

Section: Resultssupporting

confidence: 73%

Section: Methodsmentioning

confidence: 52%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Lee

Hurtado

Joh

et al. 2019

2019 IEEE International Reliability Physics Symposium (IRPS)

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“…Most publications of MIS-HEMTs are based on research devices with nitride dielectrics [202]- [205] or Al2O3 [206] as the gate insulator [207]. The gate failure in most of these MIS-HEMTs shows the TDDB behavior [208]- [210]. A 20 years lifetime (100 pm, 130 o C) extrapolation is reported for a 0.2 mm 2 gate area at positive gate voltage of 9.4 V [202].…”

Section: A Gate Lifetimementioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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“…Several kinds of dielectrics had been employed as the gate insulator materials in GaN MISHEMT, including Al2O3 [4][5][6][7][8][9][10], HfO2 [11,12], HfSiO [13], ZrO2 [14][15][16][17][18][19][20], Ga2O3 [21], SiO2 [22,23], and SiNx [24][25][26][27][28][29][30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer

Zhang

et al. 2022

IEEE J. Electron Devices Soc.

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A comprehensive study on dynamic characteristics of GaN MISHEMT with a 5nm-thick in-situ SiNx dielectric is presented. Effects of both negative and positive gate bias on threshold voltage instability were investigated and miniature threshold voltage shift was acquired. The slight shift was considered to be associated with the traps at the insulator/AlGaN interface and in the dielectric layer itself. Pulsed I-V measurements with various gate quiescent biases presented small current collapse (11%) and low enhancement of dynamic Ron for zero quiescent drain bias. When drain quiescent bias was strengthened to 20V, an increased dynamic Ron/static Ron ratio was identified but still limited to a low value of 1.24. The conduction reduction was in a good agreement with measurement results from drain current transient spectroscopy and possibly originates from trap states existed in the access region. Additional current collapse was observed in hard switching-on operation, resulted from energetic hot electrons accelerated by drain-source electrical field during the off-to-on step. The measurement results showed stabilized threshold voltage, a low dynamic Ron/static Ron ratio, and suppressed current collapse via employing a 5-nm thin in-situ SiNx layer in GaN MISHEMT, enabling it a promising solution for high-efficiency power switching applications.

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Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Abstract: The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.

Cited by 14 publications

References 38 publications

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer

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Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Abstract: The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.

Cited by 14 publications

References 38 publications

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer

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Product

Resources

About

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer