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The effects of circuit-level stress on both inverter operation and MOSFET characteristics have been investigated. Individual MOSFETs, with gate oxide thicknesses of 3.2 nm and active dimensions of 25 p x 25 p, are connected in an inverter configuration off-wafer via a low-leakage switch matrix. Inverters are stressed with a ramped voltage stress (RVS) of various magnitudes to induce different degrees of gate oxide degradation. In addition, voltage transfer curves (VTCs) of degraded inverters are simulated using a new circuit model. At the transistor level, both the PMOSFET and NMOSFET show increased gate leakage current up to eight orders of magnitude, severely reduced on-currents and transconductances (gm), and large threshold voltage (V,) shies of 100 mV or more. Different trends in inverter performance are observed following positive and negative stress. However, regardless of the stress polarity, circuit-level stress results in inverter performance degradation, such as reduced output swing, switching point shifts, and increased risdfall times. After the largest positive RVS, the output voltage swing has decreased from 1.8 V fresh, to 1.54 V poststress. Much larger changes in the inverter voltage (V-t) time domain performance are observed. The minimum output low voltage is similar to that of the VTC, but the rise time increased significantly enough that the output voltage is only pulled up to 660 mV (VDD =

This paper investigates the small-signal behavior of SO1 CMOS devices. The small signal parameters include: power gain, transconductance, input resistance, output resistance, input and output capacitance. These characteristics were compared to Bulk CMOS at RF frequencies above IOGHz. Analysis of these results, show great reduction in the negative impacts of both the parasitic S / D resistance and parasitic BJT floating-body effects on RF circuits at 1 OGHz regime. IntroductionBy scaling MOSFET channel lengths to nearly a tenth micron, CMOS is rapidly becoming a serious option for many low-power, wireless RF applications that were previously considered to be the exclusive domain of more expensive SiGe BiCMOS and GaAs technologies. Affordable, handheld

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