Gate dielectric degradation effects on nMOS devices using a noise model approach

Lawrence, Cohen; Cheek, B.J.; Lawrence, T.E.; Kumar, Sanjay; Haggag, A.; Baker, R. Jacob; Knowlton, William B.

doi:10.1109/ugim.2003.1225739

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)

DOI: 10.1109/ugim.2003.1225739

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Gate dielectric degradation effects on nMOS devices using a noise model approach

Cohen Lawrence

B.J. Cheek

T.E. Lawrence

et al.

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Gate dielectric degradation effects on nMOS devices using a noise model approach

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References 10 publications

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