A comparison of bulk and SOI deep sub-micron MOSFET small-signal behavior in the high-frequency regime beyond 10 GHz

Abstract

This paper investigates the small-signal behavior of SO1 CMOS devices. The small signal parameters include: power gain, transconductance, input resistance, output resistance, input and output capacitance. These characteristics were compared to Bulk CMOS at RF frequencies above IOGHz. Analysis of these results, show great reduction in the negative impacts of both the parasitic S / D resistance and parasitic BJT floating-body effects on RF circuits at 1 OGHz regime. IntroductionBy scaling MOSFET channel lengths to nearly a tenth micron, CMOS is rapidly becoming a serious option for many low-power, wireless RF applications that were previously considered to be the exclusive domain of more expensive SiGe BiCMOS and GaAs technologies. Affordable, handheld

The Characterization of InAlN/AlN/GaN HEMTs Using Silicon-on-Insulator (SOI) Substrate Technology

“…The C gd falls off rapidly with operation frequency for the device on SOI owing to the effective low capacitance caused by the SiO 2 in SOI substrate, resulting in an advantage over the device on HR-Si Substrate at higher frequencies. 8 In Fig. 5, the slopes of the linear fitted f max of the InAlN on SOI device and the InAlN on The microwave power characteristics were evaluated using a loadpull system with automatic tuners, which provide conjugate matched input and load impedances for maximum output power.…”