The microwave and low frequency noise characteristics of 6 inch InAlN/AlN/GaN high electron mobility transistor (HEMT) were demonstrated and investigated on silicon-on-insulator (SOI) substrate for the first time. The InAlN HEMT on SOI substrate was grown by metal organic chemical vapor deposition (MOCVD) on a p-type (111) Si SOI substrate with a p-type (100) Si handle wafer for possible heterogeneous integration. The Raman spectroscopy measurement indicates that the smaller epitaxy stress was obtained by adopting SOI wafer and X-ray diffraction measurements revealed that InAIN HEMT on SOI achieves a flat surface and an abrupt heterointerface. The InAlN HEMT on SOI exhibits a lower leakage current compared to the device on high resistivity (HR) Si substrate and thus improves the off-state breakdown voltage from 134 V to 198 V. Moreover, the buried SiO2 in SOI substrate also efficiently suppresses the signal loss resulting in the better bandwidth and the microwave power performance. Based on the low frequency noise measurement, InAlN HEMT on SOI substrate also performs a relatively slight degradation after hot carrier stress.
The low-frequency noise (LFN) and reverse recovery charge characteristics of a six-inch InAlN/ AlN/GaN Schottky barrier diode (SBD) on the Si-on-insulator (SOI) substrate were demonstrated and investigated for the first time. Raman spectroscopy indicated that using SOI wafers lowered epitaxial stress. According to the DC and LFN measurements at temperatures ranging from 300 to 450 K, the InAlN/GaN SBD on the SOI substrate showed improved forward and reverse currents and achieved a lower reverse recovery charge, compared with a conventional device.
High breakdown voltage and thermally stable AlGaN/GaN Schottky barrier diodes (SBDs) were fabricated using diamond-like carbon (DLC) anode design on a silicon (111) substrate. The DLC metal-hydrocarbon target in this study is tungsten-carbide and this film coating was prepared by reactive DC magnetron sputtering in a high temperature chamber. Based on the measured Raman spectrum, a broad peak with two shoulders at approximately 1365 cm−1 (D peak) and 1570 cm−1 (G peak) can be observed and the intensity of D peak versus G peak for DLC in this study is about 1.37 by considering both coefficient of thermal expansion and conductivity. The lower serial resistance was observed in Ni/DLC anode SBD and this characteristic was concluded that the junction heat during high current operation was dissipated through the surface DLC anode immediately and thus the thermal accumulation induced resistance was improved. Temperature dependent low frequency noise (LFN) and reverse recovery measurements both indicated that the Ni/DLC anode design exhibited a highly potential for being operated at high switching frequencies and high temperatures with low switching loss.
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