Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate

Abstract

The low-frequency noise (LFN) and reverse recovery charge characteristics of a six-inch InAlN/ AlN/GaN Schottky barrier diode (SBD) on the Si-on-insulator (SOI) substrate were demonstrated and investigated for the first time. Raman spectroscopy indicated that using SOI wafers lowered epitaxial stress. According to the DC and LFN measurements at temperatures ranging from 300 to 450 K, the InAlN/GaN SBD on the SOI substrate showed improved forward and reverse currents and achieved a lower reverse recovery charge, compared with a conventional device.

Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

“…The GaN film grown on SOI substrates show a 0.24 GPa reduction in stress as compared to HR-Si due to the thinner silicon active layer over the softer SiO 2 interlayer of the SOI template, attributing to the reduction of the impact on wafer bowing and stress in GaN epilayer. 16,17 This stress relief contributes to the improvement of mobility and carrier concentration of the AlGaN/ GaN hetero-structure, 11 therefore improving the device performance fabricated on SOI substrate.…”

Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

“…In fact, it is reported that the reverse recovery effect should be mainly from the parasitic inductance and interface trapping of SBDs [25, 26]. Considering that the contribution of parasitic inductance is characterized in the form of oscillation current which is not obviously observed in these reverse recovery curves, thus, the changing of reverse recovery time and reverse recovery charge should have resulted from the traps [27, 28].…”