Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Gu, Hong; Tian, Fei; Zhang, Chunyu; Xu, Ke; Wang, Jiale; Chen, Yong; Deng, Xuanhua; Liu, Xinke

doi:10.1186/s11671-019-2872-7

Cited by 9 publications

(7 citation statements)

References 29 publications

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“…Combining the advantages of MoTe 2 and graphene, fabricating a type of heterostructure by graphene and MoTe 2 for device applications could be considered. Actually, recently vertical heterostructures based on 2D-layered-structure materials have been attracted increasing interests [26][27][28][29][30][31][32][33] due to the absence of dangling bonds at the surfaces of isolated components and weak Femi level pinning. For graphene-TMDs-based vertical heterostructures, experiments have confirmed their excellent high on-off ratio, high photo-response, low dark current, and good quantum efficiency [34][35][36][37][38], as compared with simple TMDs-based types.…”

Section: Introductionmentioning

confidence: 99%

Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Lan

Xia²,

Huang

et al. 2020

Nanoscale Res Lett

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Two-dimensional (2D) transition metal dichalcogenides with intrinsically passivated surfaces are promising candidates for ultrathin optoelectronic devices that their performance is strongly affected by the contact with the metallic electrodes. Herein, first-principle calculations are used to construct and investigate the electronic and interfacial properties of 2D MoTe2 in contact with a graphene electrode by taking full advantage of them. The obtained results reveal that the electronic properties of graphene and MoTe2 layers are well preserved in heterostructures due to the weak van der Waals interlayer interaction, and the Fermi level moves toward the conduction band minimum of MoTe2 layer thus forming an n type Schottky contact at the interface. More interestingly, the Schottky barrier height and contact types in the graphene-MoTe2 heterostructure can be effectively tuned by biaxial strain and external electric field, which can transform the heterostructure from an n type Schottky contact to a p type one or to Ohmic contact. This work provides a deeper insight look for tuning the contact types and effective strategies to design high performance MoTe2-based Schottky electronic nanodevices.

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Section: Introductionmentioning

confidence: 99%

Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Lan

Xia²,

Huang

et al. 2020

Nanoscale Res Lett

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“…However, given the relatively immature technology for the vertical triode, the vertical GaN diode has become a hot research topic at this initial stage. Compared to AlGaN/GaN SBDs, vertical GaN SBDs have similar advantages at frequency fields such as high switching speed with low reverse recovery time and low conduction loss; nevertheless, the latter has large current density and less leakage path than the former [17,18]. Some issues have arisen for the GaN substrate.…”

Section: Gan Versus Sicmentioning

confidence: 99%

Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

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As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

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“…In 2019, Gu et al. [3, 8] acquired a self‐supporting germanium‐doped GaN SBD with 802 V breakdown voltage and 15.8 ns reverse recovery time (Trr). To sum up, vertical GaN SBDs are still in the development stage.…”

Section: Introductionmentioning

confidence: 99%

“…Yang et al [7] took advantage of nitrogen treatment to form termination structure and successfully obtained a SBD with reverse 995 V breakdown voltage. In 2019, Gu et al [3,8] This paper puts forward a novel hybrid termination structure (HTS) for vertical free-standing GaN SBD to enhance the breakdown voltage. The aims are to simulate and analyse the device structure as well as its electrical characteristics by utilising simulation software TCAD.…”

mentioning

confidence: 99%

A novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation

Lin

Chen

et al. 2021

Electronics Letters

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Gallium nitride based high-power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved. This paper proposes a novel hybrid termination structure for vertical gallium nitride Schottky diodes to improve breakdown voltage. This work is carried out to simulate the breakdown voltage and reverse characteristics of the vertical gallium nitride Schottky diode by using technology computer aided design (TCAD) simulation. Under the same testing conditions, we demonstrate that compared with the control vertical Schottky diode, the breakdown voltage of the proposed Schottky diode can be significantly advanced, which has increased by 350 V and reached 850 V.

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Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Cited by 9 publications

References 29 publications

Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Review of Recent Progress on Vertical GaN-Based PN Diodes

A novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation

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