This paper investigates the small-signal behavior of SO1 CMOS devices. The small signal parameters include: power gain, transconductance, input resistance, output resistance, input and output capacitance. These characteristics were compared to Bulk CMOS at RF frequencies above IOGHz. Analysis of these results, show great reduction in the negative impacts of both the parasitic S / D resistance and parasitic BJT floating-body effects on RF circuits at 1 OGHz regime.
IntroductionBy scaling MOSFET channel lengths to nearly a tenth micron, CMOS is rapidly becoming a serious option for many low-power, wireless RF applications that were previously considered to be the exclusive domain of more expensive SiGe BiCMOS and GaAs technologies. Affordable, handheld
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