A fully analytical potential model, valid in the weak inversion regime of short-channel cylindrical gate-all-around (GAA) MOSFET, is proposed. The model derivation is based on a previous analytical expression for tetragonal GAA MOSFET and the rotational symmetry of the tetragonal cross section. Device simulations were performed to verify that the potential distribution along the channel is properly described in all positions within the silicon body. Using the potential model, analytical expressions for the threshold voltage, subthreshold swing and drain-induced barrier lowering have been derived. Including the short-channel effects within an existing model for the subthreshold leakage current and an analytical drain current model of long-channel devices in strong inversion, a compact drain current model has been derived describing with good accuracy the transfer and output characteristics of short-channel GAA MOSFETs in all regions of operation.
The low frequency noise technique is used to obtain the volume profile of traps in the SiNx gate dielectric of hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs). In both a-Si:H and nc-Si:H TFTs, within the range of probing depth in the gate dielectric, the traps have a uniform spatial distribution which is consistent with the observed pure 1/f noise. The experimental results show that the gate dielectric trap properties near the interface are dependent on the channel material with the trap density in nc-Si:H TFTs being much smaller in comparison with the a-Si:H TFTs.
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