Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

Tsormpatzoglou, A.; Dimitriadis, C. A.; Clerc, R.; Rafhay, Quentin; Pananakakis, G.; Ghibaudo, G.

doi:10.1109/ted.2007.901075

Cited by 94 publications

(63 citation statements)

References 35 publications

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“…The potential distribution in the channel, i.e., ψ(x, y), can be derived by solving the following Poisson's equation: Most previous studies assumed a parabolic function for the electric potential along the vertical direction to obtain the analytical solution [1]- [7]. In contrast, we assume a cubic potential distribution along the vertical direction to evaluate different asymmetric gate work functions and separated gate biases, i.e.,…”

Section: Derivation Of a 2-d Potential Distributionmentioning

confidence: 99%

“…To obtain an acceptable compromise between these extreme cases, an asymmetric n+/p+ or midgap metal gate DG was proposed; however, both involve a complex fabrication process. Since detailed analyses dealing with symmetric/asymmetric DGs can be found in previous reports [2]- [7], in Section IV, we primarily focus on separated DG MOSFETs.…”

Section: Verification Of the 2-d Potential Modelmentioning

confidence: 99%

“…T WO-DIMENSIONAL channel potential distributions for MOSFETs have been widely investigated in efforts to elucidate the device characteristics, such as the threshold voltage, the subthreshold swing, and the drain-induced barrier lowering [1]- [7]. Obtaining a closed form of potential distribution models is crucial to evaluate the device characteristics depending on device and process parameters.…”

Section: Introductionmentioning

confidence: 99%

“…An approximated analytical closed form of the potential distribution is obtained by solving a Poisson's equation with proper boundary conditions and reasonable assumptions. The most widely used assumption is that the potential distribution along the vertical direction to the channel can be approximated by a parabolic function [1]- [7], i.e.,…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Universal Potential Model in Tied and Separated Double-Gate MOSFETs With Consideration of Symmetric and Asymmetric Structure

Han¹,

Kim²,

Choi³

2008

IEEE Trans. Electron Devices

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Section: Derivation Of a 2-d Potential Distributionmentioning

confidence: 99%

Section: Verification Of the 2-d Potential Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Universal Potential Model in Tied and Separated Double-Gate MOSFETs With Consideration of Symmetric and Asymmetric Structure

Han¹,

Kim²,

Choi³

2008

IEEE Trans. Electron Devices

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“…In the present work, improvement in sensitivity is achieved by lowering the dark current (using device engineering). In this paper, double gate (DG) MOSFET structure has been studied which leads to very low dark currents [11][12][13][14][15] along with ZnO gate for enhanced absorption. Recently Lee et.al.…”

Section: Introductionmentioning

confidence: 99%

Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor

Gautam¹,

Saxena²,

Gupta

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, a high-sensitivity low power photodetector using double gate (DG) MOSFET is proposed for the first time using change in subthreshold current under illumination as the sensitivity parameter. An analytical model for optically controlled double gate (DG) MOSFET under illumination is developed to demonstrate that it can be used as high sensitivity photodetector and simulation results are used to validate the analytical results. Sensitivity of the device is compared with conventional bulk MOSFET and results show that DG MOSFET has higher sensitivity over bulk MOSFET due to much lower dark current obtained in DG MOSFET because of its effective gate control. Impact of the silicon film thickness and gate stack engineering is also studied on sensitivity.

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Semianalytical modeling of the depletion layers and their effects on the threshold voltage of a junctionless double‐gate MOSFET including trapped charges

Beigi

Hashemi

2018

Int J Numerical Modelling

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This paper considers the depletion regions at the source and drain sides in a symmetric junctionless double‐gate metal‐oxide‐semiconductor field‐effect transistor with trapped charges working in subthreshold condition. The effects of depletion layers on the potential, threshold voltage, drain‐induced barrier lowering (DIBL), and the current of the device have been investigated. The channel of the transistor is divided into 4 regions: 2 regions without and with trapped charges and 2 depletion regions on either side of the channel. Solving the 2‐dimensional Poisson's equation, a semianalytical model for the potential is achieved in these regions and the threshold voltage, the DIBL, and the current are calculated. Also, the depletion widths are calculated during the modeling and their variation against the positive and negative trapped charges is investigated. To show the importance of the depletion layers, another junctionless double‐gate metal‐oxide‐semiconductor field‐effect transistor without depletion layers is considered and the mentioned electrical properties of the 2 devices are compared with each other. Smaller central potential, threshold voltage, and current and higher DIBL are achieved when the depletion layers are considered. Good agreement between the results of the proposed model and the simulated results by TCAD software shows the physical validity of the proposed model.

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Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

Cited by 94 publications

References 35 publications

Universal Potential Model in Tied and Separated Double-Gate MOSFETs With Consideration of Symmetric and Asymmetric Structure

Universal Potential Model in Tied and Separated Double-Gate MOSFETs With Consideration of Symmetric and Asymmetric Structure

Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor

Semianalytical modeling of the depletion layers and their effects on the threshold voltage of a junctionless double‐gate MOSFET including trapped charges

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