Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor

Gautam, Rajni; Saxena, Manoj; Gupta, R. S.; Gupta, Mridula

doi:10.5573/jsts.2013.13.5.500

Cited by 18 publications

(5 citation statements)

References 30 publications

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“…[15][16][17] The study also reveals that a double gate MOSFET with zinc oxide (ZnO) as a gate catalyst can offer ten times better sensitivity in terms of light detection than bulk MOSFET. 18 Despite all these advantages, the limitation of the average subthreshold swing (SS > 60 mv decade −1 ) at room temperature restricts MOSFET's usage as an optical sensor. 19 However, tunnel field-effect transistor (TFET) is favored over MOSFET as an energyefficient switch because it offers sub-KT/q SS less than 60 mV decade −1 and much lower OFF/leakage current [20][21][22] due to its interband tunneling of charge carriers along the interface.…”

mentioning

confidence: 99%

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Panda¹,

Dash²

2022

ECS J. Solid State Sci. Technol.

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We investigated the effectiveness of a single gate SiGe/Si heterostructure tunnel field-effect transistor (TFET) as a photosensor in the visible spectrum. A transparent zinc oxide (ZnO) layer is used as the optical region over the channel for sensing the incident light. When light impinges on the gate catalyst and creates optical charge carriers in the illumination region, the conductance of the device considerably rises and, consequently, the subthreshold current changes. For the suggested photosensor, the effect of varying drain-to-source voltage, germanium mole fraction (x), and silicon film thickness (tsi) on the sensor performance are investigated. The sensor offers enhanced sensitivity performance as compared to the traditional TFET in terms of several optical figures of merit such as available photocurrent, responsivity, quantum efficiency, sensitivity, and SNR, and can therefore be utilized as an efficient photosensor. The reported sensor has a peak responsivity (R) of 2.23 A/W and quantum efficiency (η) of 7.31 at a wavelength (λ) of 450 nm.

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mentioning

confidence: 99%

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Panda¹,

Dash²

2022

ECS J. Solid State Sci. Technol.

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“…This section reveals the transfer characteristics and spectral sensitivity (S n ) of low power TFET based photo sensor [27][28][29] under dark and illumination states. Figure 9 illustrates that under light state as wavelength decreases, the incident light energy (E g ) increases, which is primarily responsible of large drain current under subthreshold state.…”

Section: Resultsmentioning

confidence: 99%

Photo sensing analysis of T-shape TFET sensor under visible range of spectrum

Tiwari,

Saha

2023

Phys. Scr.

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This paper presents the optical performance of T-shape TFET based photo sensor under visible range of spectrum using a technology computer-aided design (TCAD) Synopsys simulator. The optical insight of photo device results the enhancement in spectral sensitivity (Sn), Signal to noise ratio (SNR), Responsivity (R), recombination rate, Drain current and optical generation rate. The result reveals that device under illumination reports magnitude of SNR are 67.79, 47.38, and 38.3 dB at λ= 300, 500, and 700 nm, respectively. Finally, a comparison table introduce to compare the sensitivity of proposed TFET based photo sensor with already simulated FET based sensor.

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“…Here, W is the channel width, which is the same as the channel length in this paper, and μn is the electron mobility. Figure 3 shows the relationship between the drain current and the gate voltage from (8) according to the different values of n as described in Figure 2, using (7). As shown in Figure 3, when the channel length decreases to about 5 nm, the drain current-gate voltage relationship shows a large difference depending on n when the channel length decreases to about 5 nm.…”

Section: The Structure Of Jbdg Mosfet and Subthreshold Swingmentioning

confidence: 97%

“…The increasing importance of various multi-gate MOSFETs has been recognized as the development and commercialization of sub-10 nm transistors has become a reality [1][2][3][4]. A double gate (DG) MOSFET, which is the simplest structure among multiple gate devices, has been studied as a device capable of reducing the short-channel effect [5][6][7]. Although a two-dimensional simulation method is used to analyze the shortchannel effect of sub-10 nm DGMOSFETs, a simple analytical model for circuit analysis has the focus of many studies [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Subthreshold swing model using scale length for sub-10 nm junction-based double-gate MOSFETs

Jung¹

2020

IJECE

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We propose an analytical model for subthreshold swing using scale length for sub-10 nm double gate (DG) MOSFETs. When the order of the calculation for the series type potential distribution is increased it is possible to obtain accuracy, but there is a problem that the calculation becomes large. Using only the first order calculation of potential distribution, we derive the scale length λ1 and use it to obtain an analytical model of subthreshold swing. The findings show this subthreshold swing model is in concordance with a 2D simulation. The relationship between the channel length and silicon thickness, which can analyze the subthreshold swing using λ1, is derived by the relationship between the scale length and the geometric mean of the silicon and oxide thickness. If the silicon thickness and oxide film thickness satisfy the condition of (Lg-0.215)/6.38 > tsi(=tox), it is found that the result of this model agrees with the results using higher order calculations, within a 4% error range.

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Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor

Cited by 18 publications

References 30 publications

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Photo sensing analysis of T-shape TFET sensor under visible range of spectrum

Subthreshold swing model using scale length for sub-10 nm junction-based double-gate MOSFETs

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