Abstract:We propose an analytical model for subthreshold swing using scale length for sub-10 nm double gate (DG) MOSFETs. When the order of the calculation for the series type potential distribution is increased it is possible to obtain accuracy, but there is a problem that the calculation becomes large. Using only the first order calculation of potential distribution, we derive the scale length λ1 and use it to obtain an analytical model of subthreshold swing. The findings show this subthreshold swing model is in conc… Show more
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