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This paper deals with the performance of the AR-N7520 (Allresist) negative electron beam resist (EB resist) which was selected as an etch mask for the fabrication of gratings on GaAs substrates. The developed resist sidewall shape is crucial for this purpose. The required near-to-vertical sidewall shape can be achieved by optimizing the electron beam lithography (EBL) process based on experimental investigations and computer simulations. The sidewall shape dependence on the EBL parameters (exposure dose, resist pattern, etc.) and the proximity effect are studied.

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In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to electrons. An adapted process flow is provided. At the same time we examine the resistance of this resist to RIE and its suitability as an etch-mask for etching thin Ag layers in N 2 plasma. A comparison with several chosen resists (PMMA, ma-2405, ma-N 1402, SU-8 2000 is provided.K e y w o r d s: AZ 5214E resist,

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Experimental investigation of negative electron resist AR-N 7520 profiles using an electron beam lithography system ZBA23 (Raith) is performed at variation of the exposure doses and the exposure patterns. The form of the obtained after the exposure resist profiles is investigated and optimized. Artificial neural networks for the dependence of the overall geometry of the obtained resist profiles on process parameters are trained, tested and validated. Several overall geometry quality criteria for the shape of the developed resist profile cross-sections are defined. An approach, based on the defined overall quality characteristics and multicriterial parameter optimization, is proposed and implemented for fulfillment of the technological requirements for the produced resist profile dimensions.

In this work, four types of negative electron beam resists are investigated. Electron beam lithography (EBL) experiments were conducted using EBL system ZBA23 (Raith) with the variable-shaped electron beam cross-section at 40 keV electron energy. Important electron beam resist characteristics such as sensitivity, dissolution rate, aspect ratio and sidewall developed profiles in the chemically amplified resist (CAR) SU-8 2000, non-CARs ma-N 2410 and ARN-7520, and inorganic negative resist HSQ XR-1514 are studied and compared. This study was motivated by the selection of a suitable resist for practical use such as large area gratings fabrication for optoelectronics.