Comparative study of the sidewall shape and proximity effect of the AR-N 7520 negative electron beam resist

Kostič, I.; Vutova, Katia; Koleva, Elena; Bencurova, A.; Konecnikova, A.; Andok, Robert

doi:10.1088/1742-6596/2240/1/012050

Cited by 2 publications

(5 citation statements)

References 5 publications

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“…An experimental investigation of the produced line structures in the negative electron beam resist AR-N 7520 (Allresist) on GaAs substrate using EBL system ZBA23 (Raith) is performed. The AR-N 7520 resist thin film is exposed by a variable-shaped electron beam cross-section at 40 keV electron energy [2,4]. The development was conducted with AR 300-47 developer for 60 seconds.…”

Section: Resultsmentioning

confidence: 99%

“…In [2], several parameters are calculated for the simulated resist profiles, all of them can be used as optimization criteria:…”

Section: Ar-n 7520 Resist Profile Optimizationmentioning

confidence: 99%

“…• profile sidewall angle α2(p), measured at L5 and L1 [2]. The optimization in [2] was performed by setting requirements for the mean linewidth value and simultaneously maximizing the sidewall angle, aiming to reach values closer to 90 for each of the two cases of exposure line width -200 nm and 500 nm.…”

Section: Ar-n 7520 Resist Profile Optimizationmentioning

confidence: 99%

“…In the sub-500 nm region the desired dimensions of the fabricated microstructures with the necessary nanoscale resolution and precision, quality and reproducibility within reasonable tolerances cannot be obtained without a deep knowledge of the process and a precise choice of processing parameters. The use of sophisticated materials, the long production chain for obtaining the desired micro and nano-structures and expensive technology process define the importance of the equipment optimization [1] and the process parameter optimization [2,3], based on experimental investigations and computer simulations of electron beam exposure and resist profile development processes during EBL.…”

Section: Introductionmentioning

confidence: 99%

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Optimisation criteria for the process electron beam lithography of negative AR-N7520 resists

Koleva

Kostič

Andok

et al. 2023

J. Phys.: Conf. Ser.

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Experimental investigation of negative electron resist AR-N 7520 profiles using an electron beam lithography system ZBA23 (Raith) is performed at variation of the exposure doses and the exposure patterns. The form of the obtained after the exposure resist profiles is investigated and optimized. Artificial neural networks for the dependence of the overall geometry of the obtained resist profiles on process parameters are trained, tested and validated. Several overall geometry quality criteria for the shape of the developed resist profile cross-sections are defined. An approach, based on the defined overall quality characteristics and multicriterial parameter optimization, is proposed and implemented for fulfillment of the technological requirements for the produced resist profile dimensions.

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Section: Resultsmentioning

confidence: 99%

“…In [2], several parameters are calculated for the simulated resist profiles, all of them can be used as optimization criteria:…”

Section: Ar-n 7520 Resist Profile Optimizationmentioning

confidence: 99%

Section: Ar-n 7520 Resist Profile Optimizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optimisation criteria for the process electron beam lithography of negative AR-N7520 resists

Koleva

Kostič

Andok

et al. 2023

J. Phys.: Conf. Ser.

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“…The e-beam lithography is used for developing structures in the nanometer range with a depth of 1-5 μm and high aspect ratios and high resolution. Moreover, it is very expensive, slower in speed, and complex with high maintenance costs and scattering difficulties [94,95]. On the other hand, a combination of photolithography and electron beam lithography offers both larger and smaller features that are imaged through optical lithography and electron beam lithography, respectively.…”

Section: Patterning Of Ii-vi Semiconductors 331 Patterningmentioning

confidence: 99%

Emerging II-VI wide bandgap semiconductor device technologies

Kuddus,

Mostaque,

Mouri

et al. 2024

Phys. Scr.

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The demand for advanced electronic and optoelectronic devices has driven significant research and development efforts toward exploring emerging semiconductor materials with enhanced performance characteristics. II-VI semiconductors have been studied extensively owing to their wide bandgap characteristics, which enable high electron mobility, excellent thermal stability, and resistance to radiation damage. These properties make them well-suited for a range of applications, including solar cells, light-emitting diodes (LEDs), photodetectors, lasers, sensors, and field effect transistors (FETs). In II-VI compounds, both ionic and covalent bonds exist with a higher electronegative nature of the VI-group elements than II-group elements. This existing ionic behavior strongly influences the binding of valence band electrons rather strongly to the lattice atoms. Thus, the II-VI semiconductors such as CdS, CdTe, ZnS, ZnSe, and CdSe possess wide tunable bandgaps (~0.02 to ≥ 4.0 eV) and high absorption coefficients of approximately 106 cm-1, setting them apart from other semiconductors formed by a covalent bond with closely equal atomic weights. This review article delves into the physics of II-VI semiconductor homo/heterojunctions, and the steps involved in device fabrication including lithography, etching, metallization, stability (oxidation and passivation) and polymerization together with several doping strategies. Furthermore, this review explores the process for tuning the distinct physical and chemical properties and a substantial advancement in electronic, and optoelectronic devices, including tools, cutting-edge equipment, and instrumentations. This comprehensive review provides detailed insights into the potential and technological progress of II-VI wide bandgap semiconductor device technology including experienced challenges and prospects.

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Comparative study of the sidewall shape and proximity effect of the AR-N 7520 negative electron beam resist

Cited by 2 publications

References 5 publications

Optimisation criteria for the process electron beam lithography of negative AR-N7520 resists

Optimisation criteria for the process electron beam lithography of negative AR-N7520 resists

Emerging II-VI wide bandgap semiconductor device technologies

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