In this paper we describe a complete mathematical model and corresponding sofIwm for the exposure and development process simulations pertinent to electron and ion lithography (EL). The main steps of this model are. energy, and evolution simulation.(i) exposure process modeling-decuon and ion scattering model and calculation of dissipated (ii) development process modeling-solubility rate caluclation and development profilesThe models presented for the exposure and development process simulations are realised by means of a software package. Thus it is possible to predict the final result in the w e of EU under given initial conditions. The simulation result is very useful when optimizing particular technological processes in microcircuit lithography. It can be used for the development of an algorithm to correct the proximity effect of real microelectronic structures.
This study reveals the efficiency of the electron beam processing of titanium technogenic material with a high level of impurities and the quality of the obtained metal in correlation to process parameters which are discussed. The influence of the beam power and melting time on the composition variation, morphologies, hardness of metal samples and mass losses is investigated. Based on the different technological parameters, the removal efficiency of impurities is also discussed, and the corresponding experiments are carried out in order to make a comparison. Different thermal process conditions are realized during the single-melt operation. Chemical and metallographic analyses are performed, and the results are discussed. The hardness of the titanium decreases by prolonging the time of the electron beam processing. A maximal overall removal efficiency of 99.975% is seen at 5.5 kW beam power for a 40 min melting time and the best purification of Ti (99.996%) is achieved.
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