Structural characterization of a fully etched amorphous W/Si
multilayer grating with a lateral periodicity of 800 nm is performed by x-ray
reflectivity in the coplanar and non-coplanar modes using a scintillation
detector and a two-dimensional gas-filled detector, respectively.
Three-dimensional reciprocal space constructions were used to explain the
scattering features recorded in both geometries. Coplanar coherent grating
truncation rods were fitted by a dynamical theory for rough gratings.
Comparison of the reflectivity from the reference planar multilayer completes
the study.
The study focused on object formation in (100) InP by etching in 3HCl:1H3PO4 through convex and concave square mask patterns of varied orientation and size. Their upper right-hand-side corners were aligned to , and to 15°, 30° and 45° off to . Some -oriented convex squares had - and -oriented corners compensated with rectangular extensions. The concave patterns led to objects with ordinary slow-etching or etch-stop facets along sides in line within and with ordinary and re-entrant facets along sides in line within . The convex patterns (, 15° and 30°) led to objects initially confined by fast-etching facets at corners and slow-etching or etch-stop facets at sides (ordinary between and , and re-entrant between and ). The side facets were eliminated by the progress of the corner ones. They (-oriented patterns) proceeded at rates almost independent of size before the eradication of the side facets, after which they proceeded faster. The -oriented convex patterns led to objects confined only by fast-etching facets. The objects developed at rates that considerably depended on pattern size and etching time. Objects under small patterns developed faster compared to those under large ones. The -oriented corner-compensated patterns led to pyramidal objects confined by facets related to (110), , (101) and .
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