The paper presents detailed Raman scattering study of the unusually broad E2g phonon mode in MgB2 crystal. For the first time, it is shown by the polarized Raman scattering on few-micron-size crystallites with natural faces that the observed broad Raman feature really does obey the selection rules of an E2g mode. Raman spectra on high quality polycrystalline superconducting MgB2 wires reveal a very symmetric E2g phonon line near 615 cm −1 with the room temperature linewidth of 260 cm −1 only. Additional scattering of different polarization dependence, observed in certain crystallites is interpreted as weighted phonon density of states induced by lattice imperfections.

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Fast highly-sensitive room-temperature semiconductor gas sensor based on the nanoscale Pt-TiO 2 -Pt sandwich, Sensors and Actuators B: Chemical (2014), http://dx. AbstractDevelopment of fast highly-sensitive semiconductor gas sensors operating at room temperature, which would be compatible with semiconductor technology, remains a challenge for researchers.Here we present such sensor based on a nanoscale Pt-TiO 2 -Pt sandwich. The sensor consists of a thin (~30 nm) nanocrystalline TiO 2 layer with ~10 nm grains, placed between the bottom Pt electrode layer and top Pt electrode shaped as a long narrow (width w down to 80 nm) stripe. If we decrease w to ~100 nm and below, the sensor exposed to air with 1% H 2 exhibits the increase of response (R air / ) up to ~ 10 7 and decrease of the reaction time to only a few seconds even at room temperature. The sensitivity increase is due to a nontrivial non-ohmic effect, a sudden decrease (by three orders of magnitude) of the electrical resistance with decreasing w for w ~ 100nm. This non-ohmic effect is explained as a consequence of two nanoscale-related effects: the hydrogen-diffusion-controlled spatially-inhomogeneous resistivity of the TiO 2 layer, combinedPage 2 of 41 A c c e p t e d M a n u s c r i p t 2 with onset of the hot-electron-temperature instability when the tiny grains are subjected to high electric field.

Femtosecond pump-probe studies show that carrier dynamics in MgB2 films is governed by the sub-ps electron-phonon (e-ph) relaxation present at all temperatures, the few-ps e-ph process well pronounced below 70 K, and the sub-ns superconducting relaxation below T(c). The amplitude of the superconducting component versus temperature follows the superposition of the isotropic dirty gap and the three-dimensional pi gap dependences, closing at two different T(c) values. The time constant of the few-ps relaxation exhibits a double divergence at temperatures corresponding to the T(c)'s of the two gaps.

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Abstract:Titanium dioxide thin films are extensively studied for applications in solid state gas sensor devices. Their gas sensing properties are strongly dependent on deposition technique, annealing temperature, film thickness and consequent properties like crystalline structure, grain size or amount of defects and impurities. In this work we report the gas sensing properties of TiO 2 thin films prepared by reactive magnetron sputtering technique and subsequently annealed at temperatures 600°C and 900°C. The films were exposed to different concentrations of H 2 gas up to 10 000 ppm. Their sensitivity to gas at various operating temperatures, ranging from 250°C to 450°C, was obtained by measuring their resistance. 07.07.Df, 68.47.Gh, 73.25.+i, 82.47 PACS (2008):

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