Study of the new CSAR62 positive tone electron-beam resist at 40 keV electron energy

Andok, Robert; Bencurova, A.; Vutova, Katia; Koleva, Elena; Nemec, Pavol; Hrkut, P.; Kostič, I.; Mladenov, G.

doi:10.1088/1742-6596/700/1/012030

Cited by 11 publications

(3 citation statements)

References 3 publications

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“…2.1 Organic/inorganic hybridization by SIS PMMA (Polymer Source, M n = 1,300,000) and AR-P 6200 (Allresist CSAR62) 22,23) were selected as positive-tone EB resists, and their chemical structures are shown in Fig. 1.…”

Section: Experimental Methodsmentioning

confidence: 99%

Elemental depth profiles and plasma etching rates of positive-tone electron beam resists after sequential infiltration synthesis of alumina

Ozaki

Ito

Hiroshiba

et al. 2018

Jpn. J. Appl. Phys.

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By scanning transmission electron microscopy and energy dispersive X-ray spectroscopy (STEM–EDS), we investigated the elemental depth profiles of organic electron beam resist films after the sequential infiltration synthesis (SIS) of inorganic alumina. Although a 40-nm-thick poly(methyl methacrylate) (PMMA) film was entirely hybridized with alumina, an uneven distribution was observed near the interface between the substrate and the resist as well as near the resist surface. The uneven distribution was observed around the center of a 100-nm-thick PMMA film. The thicknesses of the PMMA and CSAR62 resist films decreased almost linearly as functions of plasma etching period. The comparison of etching rate among oxygen reactive ion etching, C3F8 reactive ion beam etching (RIBE), and Ar ion beam milling suggested that the SIS treatment enhanced the etching resistance of the electron beam resists to chemical reactions rather than to ion collisions. We proposed oxygen- and Ar-assisted C3F8 RIBE for the fabrication of silica imprint molds by electron beam lithography.

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Section: Experimental Methodsmentioning

confidence: 99%

Elemental depth profiles and plasma etching rates of positive-tone electron beam resists after sequential infiltration synthesis of alumina

Ozaki

Ito

Hiroshiba

et al. 2018

Jpn. J. Appl. Phys.

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“…AR-P 6200.13 is a non-chemical amplification positive electron beam resist with a maximum resolution of less than 10 nm, high sensitivity, and fast exposure speed. Meanwhile, its excellent dry etching resistance is two times that of the traditional PMMA adhesive, which can be used to replace ZEP520 18 . The high resolution and etching resistance of AR-P 6200.13 are suitable for making high aspect ratio nanowires, which are the key factors for the success of our experiments.…”

Section: Fabrication Of Nbn Nanowiresmentioning

confidence: 99%

Fabrication of superconducting niobium nitride nanowire with high aspect ratio for X-ray photon detection

Guo

Chen

Pan

et al. 2020

Sci Rep

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The niobium nitride (NbN) nanowires fabricated with the high-quality ultra-thin NbN film with a thickness of 3 nm-6 nm were widely used for single photon detectors. These nanowires had a low aspect ratio, less than 1:20. However, increasing the thickness and the aspect ratio of highly-uniformed NbN nanowires without reducing the superconductivity is crucial for the device in detecting high-energy photons. In this paper, a high-quality superconducting nanowire with aspect ratio of 1:1 was fabricated with optimized process, which produced a superconducting critical current of 550 μA and a hysteresis of 36 μA at 2.2 K. With the optimization of the electron beam lithography process of AR-P6200.13 and the adjustion of the chamber pressure, the discharge power, as well as the auxiliary gas in the process of reactive ion etching (RIE), the meandered NbN nanowire structure with the minimum width of 80 nm, the duty cycle of 1:1 and the depth of 100 nm were finally obtained on the silicon nitride substrate. Simultaneously, the sidewall of nanowire was vertical and smooth, and the corresponding depth-width ratio was more than 1:1. The fabricated NbN nanowire will be applied to the detection of soft X-ray photon emitted from pulsars with a sub-10 ps time resolution. Niobium nitride (NbN) has been widely studied in superconductor electronics for high superconducting transition temperature (up to 16 K), critical current density and critical magnetic field 1. Moreover, the corresponding physical properties were stable, and it could have large scale with high quality. Also, it was the most common materials to fabricate the superconducting nanowire single-photon detectors (SNSPDs) 2,3 , the mixer of Terahertz wave detection hot-electron-bolometer (HEB) 4 , and the superconducting quantum interference device (SQUID). At present, the preparation of SNSPDs mainly use the epitaxial method to grow the high-quality ultra-thin NbN film with a thickness of 3-6 nm. Then, the film is prepared to the meandered nanowire structure by means of micro-nano processing. The width of NbN nanowire is about 100 nm, and the aspect ratio is generally lower than 1:20. Considering the advantages of SNSPDs, such as the low dark count, the wide response spectrum, the short recovery time and the high time precision, SNSPDs were widely studied and applied to the detection of visible/ infrared single photon 5. However, the application of SNSPDs in the direction of high-energy photon (UV, X-ray, and gamma ray) was rarely studied for low absorption of ultra-thin NbN films with the high-energy photons 6-8. Through Geant4 simulations, we obtained that the X-ray photon absorption of the 10 nm thick NbN film for 1 keV and 6 keV was only 3.69% and 0.23%, respectively 9 , and the SNSPD prepared with the ultra-thin NbN film was unable to effectively detect high-energy single photons. The simulation results show that the absorption of 1 keV and 6 keV by NbN with a 100 nm film thickness are 31.31% and 2.25%, respectively. To improve the absorption of superconducting NbN...

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“…In order to meet the throughput issue for area-exposure cases, highly sensitive electron resists can be an option. For instance so called semi-chemically amplified resist (CSAR) is one of the good choices [34]. The proximity effect remains an issue and its contribution becomes even more complex in irregular designs containing sub-50 nm features.…”

Section: Electron-beam Lithographymentioning

confidence: 99%

Improving the efficiency of solar cells by upconverting sunlight using field enhancement from optimized nano structures

Balling

Christiansen

et al. 2018

Optical Materials

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Study of the new CSAR62 positive tone electron-beam resist at 40 keV electron energy

Cited by 11 publications

References 3 publications

Elemental depth profiles and plasma etching rates of positive-tone electron beam resists after sequential infiltration synthesis of alumina

Elemental depth profiles and plasma etching rates of positive-tone electron beam resists after sequential infiltration synthesis of alumina

Fabrication of superconducting niobium nitride nanowire with high aspect ratio for X-ray photon detection

Improving the efficiency of solar cells by upconverting sunlight using field enhancement from optimized nano structures

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