Study and comparison of resist characteristics for different negative tone electron beam resists

Abstract

In this work, four types of negative electron beam resists are investigated. Electron beam lithography (EBL) experiments were conducted using EBL system ZBA23 (Raith) with the variable-shaped electron beam cross-section at 40 keV electron energy. Important electron beam resist characteristics such as sensitivity, dissolution rate, aspect ratio and sidewall developed profiles in the chemically amplified resist (CAR) SU-8 2000, non-CARs ma-N 2410 and ARN-7520, and inorganic negative resist HSQ XR-1514 are studied and compared. This study was motivated by the selection of a suitable resist for practical use such as large area gratings fabrication for optoelectronics.

Configurable swellability of hydrogel microstructure for structural-color-based imaging concealment/encryption

“…1c) shows an exponential relationship between the patterned PVA thickness and the exposure dose at 200-1345.5 µC cm −2 , which matches the general exposure behavior of negative resists. 45,46 Meanwhile, a progressive decrease in the swelling ratio is observed mainly due to the increasing crosslinking degree of hydrogel molecular chains, concomitant with the increasing exposure dose. In Zone II, the patterned PVA thickness can be increased with the increasing exposure dose from 1345.5 to 2884.2 µC cm −2 , but the swelling ratio is fixed at 1.14-1.10.…”

Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems

“…Furthermore, line width fluctuations were confined to less than 2 nm. The exceptional performance of HSQ in EBL may be attributed to its dissolution rate in alkaline solutions, cross-linking stability induced by electron beam exposure, and the role of the developer TMAH [ 43 , 44 ].…”