GaN/SiC based surface acoustic wave structures for hydrogen sensors with enhanced sensitivity

Rýger, Ivan; Vanko, G.; Lalinský, T.; Hašc̆ı́k, Š.; Bencurova, A.; Nemec, Pavol; Andok, Robert; Tomáška, M.

doi:10.1016/j.sna.2015.02.041

Cited by 16 publications

(4 citation statements)

References 29 publications

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“…In addition to noble metal decorated SiC composites, other SiC coupled semiconductors as gas sensing material were also synthesized. Rýger et al [ 86 ] demonstrated that the GaN/SiC heterostructure exhibited enhanced sensitivity towards H 2 . The sensor device showed a low detection limit (20 ppm) and a short response time (12 s).…”

Section: Applications Of One-dimensional Sic Nanomaterials In Sensorsmentioning

confidence: 99%

Progress of One-Dimensional SiC Nanomaterials: Design, Fabrication and Sensing Applications

Liu,

Zhang,

et al. 2024

Nanomaterials

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One-dimensional silicon carbide (SiC) nanomaterials hold great promise for a series of applications, such as nanoelectronic devices, sensors, supercapacitors, and catalyst carriers, attributed to their unique electrical, mechanical, and physicochemical properties. Recent progress in their design and fabrication has led to a deep understanding of the structural evolution and structure–property correlation. Several unique attributes, such as high electron mobility, offer SiC nanomaterials an opportunity in the design of SiC-based sensors with high sensitivity. In this review, a brief introduction to the structure and properties of SiC is first presented, and the latest progress in design and fabrication of one-dimensional SiC nanomaterials is summarized. Then, the sensing applications of one-dimensional SiC nanomaterials are reviewed. Finally, our perspectives on the important research direction and future opportunities of one-dimensional SiC nanomaterial for sensors are proposed.

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Section: Applications Of One-dimensional Sic Nanomaterials In Sensorsmentioning

confidence: 99%

Progress of One-Dimensional SiC Nanomaterials: Design, Fabrication and Sensing Applications

Liu,

Zhang,

et al. 2024

Nanomaterials

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“…In addition to accurate control of mechanical strain, the SAW substrate also provides a platform for electro-phonon interaction [13,14], which may enrich the functionality of the 2D material-SAW integration system. On one hand, the propagating SAW is reported to be effectively modulate the transport behavior of carriers in 2D materials and other low dimensional semiconductor devices [15][16][17], which can not only be used to build novel devices, such as single photon emitter [18] and tunnel diode, but also significantly improve the performance of conventional devices [19,20]. On the other hand, the density and distribution of carriers in the 2D materials can affect the propagation of SAW, resulting in the shift of its resonant frequency [21].…”

Section: Introductionmentioning

confidence: 99%

Mechano/acousto-electric coupling between ReS₂ and surface acoustic wave

Zhang¹,

Chen²,

Zhang³

et al. 2023

Nanotechnology

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Two-dimensional (2D) materials are promising candidates for developing next generation electronic/optoelectronic devices with programmable multi functions, due to their widely tunable properties by various physical stimuli. Mechanical strain is one of the most promising means to effectively modulate the physical properties of 2D materials. Nevertheless, few studies reported micro/nano scale controllable strain application platforms, limiting the development of novel mechano-electrical/optoelectrical devices based on 2D materials. This work proposes surface acoustic wave (SAW) device as a controllable strain modulation platform for 2D materials with sub-micro scale resolution. The platform uses the piezoelectric material (LiNbO3) as the substrate, which is deposited with interdigitated transducers (IDT) to generate SAW on the surface. The propagation of SAW causes surface deformation, which is then transferred to the 2D materials on the substrate. The period of the surface deformation/strain is related with that of SAW, which is determined by the period of IDT with nano meter scale. It is demonstrated that the photo luminescence spectrum of a 2D ReS2 flake on this platform gradually shifts with the SAW excitation power, which reaches a shift of 3 nm as the SAW excitation power achieves 26 dBm, corresponding to a band gap increase of 5 meV. Meanwhile, the platform is also capable to provide acousto-electric coupling between SAW and 2D materials, which is demonstrated by the shift of the SAW resonant frequency due to the re-distribution of photo-generated carriers in ReS2 upon light illumination.

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“…Hence early leak detection of hydrogen is the need of the hour. Optical [22], electrochemical [23], acoustic wave variation [24] and calorimetric techniques have already been reported in hydrogen sensing but several drawbacks such as large size, high fabrication cost, slow response, high operating temperature, average sensing response restricts their widespread applications.…”

Section: Introductionmentioning

confidence: 99%

Junctionfree Gate Stacked Vertical TFET Hydrogen Sensor at Room Temperature

Ghosh

Rajan

Varghese

2022

IEEE Trans. Nanotechnology

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Presented through this work is an investigation of junctionfree gate-stacked (SiO2 + high-k) double gated vertical tunnel field-effect transistor (JF-GS-VTFET) with focus on its hydrogen (H2) sensing performance at room temperature (RT) for the first time. JF-GS-VTFET with vertically characterized channel length feature minimizes short channel effects (SCEs), elevates gate controllability over regular TFETs without the presence of any sharp doping gradient. A systematical study of the sensing performance is demonstrated through effective variations in Palladium (Pd) and Gold (Au) catalytic metal gate work functions corresponding to the concentration of hydrogen appearing at the gate metal surface. A concentration dependent thorough analysis has been illustrated in terms of energy band, potential, transfer and transient characteristics. Sensing capability of the device have been analyzed in terms of variations in detecting parameters such as transconductance (gm), off current, on current, threshold voltage and sub-threshold slope in presence of the target gas using SILVACO ATLAS TCAD. At 1.04 ppm H2 gas concentration, the optimally designed sensor exhibits high ION/IOFF ratios in the order of ~𝟏𝟎 𝟏𝟑 and ~𝟏𝟎 𝟏𝟏 , high gm sensing responses of 99.98% and 98.93%, high off current sensing responses of ~𝟏. 𝟖𝟗𝟓 × 𝟏𝟎 𝟒 and ~1. 𝟒𝟕 × 𝟏𝟎 𝟒 , better sub-threshold swing sensing responses of ~0.71 and ~0.55, increased threshold voltage sensing responses of ~0.27 and ~0.25 for Pd and Au metal gates respectively at RT. Perceptible outcomes in terms of interface trap charge density have also been presented to recognize RT H2 sensing.

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GaN/SiC based surface acoustic wave structures for hydrogen sensors with enhanced sensitivity

Cited by 16 publications

References 29 publications

Progress of One-Dimensional SiC Nanomaterials: Design, Fabrication and Sensing Applications

Progress of One-Dimensional SiC Nanomaterials: Design, Fabrication and Sensing Applications

Mechano/acousto-electric coupling between ReS₂ and surface acoustic wave

Junctionfree Gate Stacked Vertical TFET Hydrogen Sensor at Room Temperature

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GaN/SiC based surface acoustic wave structures for hydrogen sensors with enhanced sensitivity

Cited by 16 publications

References 29 publications

Progress of One-Dimensional SiC Nanomaterials: Design, Fabrication and Sensing Applications

Progress of One-Dimensional SiC Nanomaterials: Design, Fabrication and Sensing Applications

Mechano/acousto-electric coupling between ReS2 and surface acoustic wave

Junctionfree Gate Stacked Vertical TFET Hydrogen Sensor at Room Temperature

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Product

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Mechano/acousto-electric coupling between ReS₂ and surface acoustic wave